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What is GP401DDS18?

This electronic component, produced by the manufacturer "Dynex Semiconductor", performs the same function as "Low VCE(SAT) Dual Switch IGBT Module Preliminary Information".


GP401DDS18 Datasheet PDF - Dynex Semiconductor

Part Number GP401DDS18
Description Low VCE(SAT) Dual Switch IGBT Module Preliminary Information
Manufacturers Dynex Semiconductor 
Logo Dynex Semiconductor Logo 


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GP401DDS18
FEATURES
s Low VCE(SAT)
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
GP401DDS18
Low VCE(SAT) Dual Switch IGBT Module
Preliminary Information
DS5272-3.0 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
I
C(PK)
(typ)
(max)
(max)
1800V
2.6V
400A
800A
APPLICATIONS
s High Reliability Inverters
s Motor Controllers
s Traction Drives
s Resonant Converters
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 600V to
3300V and currents up to 4800A.
The GP401DDS18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP401DDS18
Note: When ordering, please use the whole part number.
12(C2)
2(C2)
7(C1)
4(E2)
1(E1)
11(G2)
10(E2)
3(C1)
5(E1)
6(G1)
Fig. 1 Dual switch circuit diagram
5
6
7
8
3
9
12
11
10
4
1
2
Outline type code: D
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/10

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GP401DDS18 equivalent
GP401DDS18
TYPICAL CHARACTERISTICS
800
Common emitter
700 Tcase = 25˚C
Vge = 20/15/12/10V
600
500
400
300
200
100
0
0 1.0 2.0 3.0 4.0 5.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
800
Common emitter
Tcase = 125˚C
700
Vge = 20/15/12/10V
600
500
400
300
200
100
0
0 1.0 2.0 3.0 4.0 5.0 6.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
400
Tcase = 25˚C
360 VGE = ±15V
VCE = 900V
320
280
240 A
200 B
160 C
120
80
A: Rg = 4.7Ω
40 B: Rg = 3.3Ω
C: Rg = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
300
280
Tcase = 125˚C
VGE = ±15V
260 VCE = 900V
240
220
A
200
B
180
160 C
140
120
100
80
60
40 A: Rg = 4.7Ω
B: Rg = 3.3Ω
20 C: Rg = 2.2Ω
0
0 50 100 150 200 250 300 350 400
Collector current, IC - (A)
Fig. 6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/10


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Featured Datasheets

Part NumberDescriptionMFRS
GP401DDS18The function is Low VCE(SAT) Dual Switch IGBT Module Preliminary Information. Dynex SemiconductorDynex Semiconductor

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