|
|
PDF GP401DDM18 Data sheet ( Hoja de datos )
| Número de pieza | GP401DDM18 | |
| Descripción | Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information | |
| Fabricantes | Dynex Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de GP401DDM18 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
GP401DDM18
GP401DDM18
Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module
Advance Information
DS5397-1.2 January 2001
FEATURES
s Low VCE(SAT)
s 400A Per Switch
s High Thermal Cycling Capability
s Non Punch Through Silicon
s Isolated MMC Base with AlN Substrates
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
2.6V
400A
800A
APPLICATIONS
s High Reliability
s Motor Controllers
s Traction Drives
s Low Loss System Retrofit
The Powerline range of high power modules includes dual
and single switch configurations covering voltages from 1200V to
3300V and currents up to 4800A.
The GP401DDM18 is a dual switch 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. Designed with low VCE(SAT) to minimise conduction
losses, the module is of particular relevance in low to medium
frequency applications. The IGBT has a wide reverse bias safe
operating area (RBSOA) ensuring reliability in demanding
applications. This device is optimised for traction drives and
other applications requiring high thermal cycling capability.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP401DDM18
Note: When ordering, please use the complete part number.
12(C2)
2(C2)
7(C1)
4(E2)
1(E1)
11(G2)
10(E2)
3(C1)
5(E1)
6(G1)
Fig. 1 Dual switch circuit diagram
5
6
7
8
3
9
12
11
10
4
1
2
Outline type code: D
(See Package Details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
1/7
1 page  
GP401DDM18
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless
stated otherwise. DO NOT SCALE.
62 62
15 15
5
6
7
8
9
12
3
4
6x M4
11
10
14 11.5
35
1
2
20
4x M8
6x Ø7
5
140
Nominal weight: 1050g
Module outline type code: D
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GP401DDM18.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GP401DDM18 | Hi-Reliability Dual Switch Low VCE(SAT) IGBT Module Advance Information | Dynex Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |