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PDF GP200MHS18 Data sheet ( Hoja de datos )
| Número de pieza | GP200MHS18 | |
| Descripción | Half Bridge IGBT Module | |
| Fabricantes | Dynex Semiconductor | |
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GP200MHS18
FEATURES
s Non Punch Through Silicon
s Isolated Copper Baseplate
s Low Inductance Internal Construction
s 200A Per Arm
GP200MHS18
Half Bridge IGBT Module
DS5304-3.1 January 2001
KEY PARAMETERS
VCES
VCE(sat)
IC
IC(PK)
(typ)
(max)
(max)
1800V
3.5V
200A
400A
APPLICATIONS
s High Power Inverters
s Motor Controllers
s Induction Heating
s Resonant Converters
The Powerline range of high power modules includes half
bridge, dual and single switch configurations covering voltages
from 600V to 3300V and currents up to 4800A.
The GP200MHS18 is a half bridge 1800V, n channel
enhancement mode, insulated gate bipolar transistor (IGBT)
module. The IGBT has a wide reverse bias safe operating area
(RBSOA) ensuring reliability in demanding applications.
The module incorporates an electrically isolated base plate
and low inductance construction enabling circuit designers to
optimise circuit layouts and utilise earthed heat sinks for safety.
ORDERING INFORMATION
Order As:
GP200MHS18
Note: When ordering, please use the whole part number.
11(C2)
1(E1C2)
9(C1)
2(E2)
6(G2)
7(E2)
3(C1)
5(E1)
4(G1)
Fig. 1 Half bridge circuit diagram
11
12
3
6
10 7
85
94
Outline type code: M
(See package details for further information)
Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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1 page  
GP200MHS18
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25˚C
350
Vge = 20/15/12V
300 Vge = 10V
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
400
Common emitter
350 Tcase = 125˚C
Vge = 20/15/12V
300 Vge = 10V
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
250
Tcase = 25˚C
VGE = ±15V
VCE = 900V
200
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 4.7Ω
150
A
100 B
C
50
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
300
Tcase = 125˚C
VGE = ±15V
VCE = 900V
250
200
150
100
A
B
C
50 A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 4.7Ω
0
0 50 100 150 200
Collector current, IC - (A)
Fig. 6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
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| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet GP200MHS18.PDF ] | |
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