STD11N65M5 Datasheet PDF - STMicroelectronics
| Part Number | STD11N65M5 | |
| Description | N-channel Power MOSFET | |
| Manufacturers | STMicroelectronics | |
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STB11N65M5, STD11N65M5, STF11N65M5,
STP11N65M5, STU11N65M5
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET
in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet — production data
Features
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
VDSS @ RDS(on)
TJmax
max
ID
710 V < 0.48 Ω 9 A
■ Worldwide best RDS(on) * area
■ Higher VDSS rating and high dv/dt capability
■ Excellent switching performance
■ 100% avalanche tested
Applications
■ Switching applications
TAB
TAB
2
3
1
D2PAK
23
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
$ 4!"
Description
These devices are N-channel MDmesh™ V
Power MOSFETs based on an innovative
proprietary vertical process technology, which is
combined with STMicroelectronics’ well-known
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order codes
STB11N65M5
STD11N65M5
STF11N65M5
STP11N65M5
STU11N65M5
Marking
11N65M5
'
3
!-V
Package
D2PAK
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
December 2012
This is information on a product in full production.
Doc ID 022864 Rev 2
1/25
www.st.com
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STB11N65M5, STD11N65M5, STF11N65M5, STP11N65M5, STU11N65M5 Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(v)
tr(v)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
Test conditions
VDD = 400 V, ID = 7.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 21 and
Figure 24)
Min. Typ. Max. Unit
23 ns
10 ns
--
13.5 ns
13 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 9 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V (see Figure 21)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 9 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 21)
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
9A
36 A
1.5 V
232 ns
2 µC
17.5 A
328 ns
2.8 µC
17 A
Doc ID 022864 Rev 2
5/25
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| Information | Total 25 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ STD11N65M5.PDF Datasheet ] | |
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