|
|
PDF STD11N65M2 Data sheet ( Hoja de datos )
| Número de pieza | STD11N65M2 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de STD11N65M2 (archivo pdf) en la parte inferior de esta página. Total 21 Páginas | ||
|
No Preview Available !
STD11N65M2, STP11N65M2,
STU11N65M2
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg
Power MOSFETs in DPAK, TO-220 and IPAK packages
Datasheet - preliminary data
TAB
3
1
DPAK
TAB
TAB
3
2
1
TO-220
IPAK
3
2
1
Figure 1. Internal schematic diagram
' 7$%
Features
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
VDS
RDS(on) max ID
650 V
0.67 Ω
7A
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
Description
*
6
AM01476v1
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Qg. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
Order codes
STD11N65M2
STP11N65M2
STU11N65M2
Table 1. Device summary
Marking
Package
11N65M2
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
May 2014
DocID026376 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/21
www.st.com
1 page  
STD11N65M2, STP11N65M2, STU11N65M2
Electrical characteristics
Symbol
Table 7. Switching times
Parameter
Test conditions
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 325 V, ID = 3.5 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 16 and 21)
Min. Typ. Max. Unit
- 9.5 - ns
- 7.5 - ns
- 26 - ns
- 15 - ns
Symbol
Table 8. Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
(1) (2)
ISDM
Source-drain current (pulsed)
(3)
VSD Forward on voltage
VGS = 0, ISD = 7 A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
(2)
ISD = 7 A , di/dt = 100 A/μs
VDD = 60 V (see Figure 18)
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100 A/μs
VDD = 60 V, Tj=150 °C
(see Figure 18)
1. Pulse width limited by safe operating area
2. Test condition is referred to through-hole package
3. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
-
-
-
-
-
-
-
-
-
7A
28 A
1.6 V
318 ns
2.5 nC
15.5 A
437 ns
3.2 nC
15 A
DocID026376 Rev 1
5/21
21
5 Page 
STD11N65M2, STP11N65M2, STU11N65M2
Package mechanical data
4.1 DPAK, STD11N65M2
Figure 22. DPAK (TO-252) type A drawing
DocID026376 Rev 1
B2
11/21
21
11 Page | ||
| Páginas | Total 21 Páginas | |
| PDF Descargar | [ Datasheet STD11N65M2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STD11N65M2 | N-channel Power MOSFET | STMicroelectronics |
| STD11N65M5 | N-channel Power MOSFET | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |