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PDF 13007 Data sheet ( Hoja de datos )
| Número de pieza | 13007 | |
| Descripción | NPN Epitaxial Silicon Transistor | |
| Fabricantes | Elite | |
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 1. - 430V, NPN Silicon Transistor  Hay una vista previa y un enlace de descarga de 13007 (archivo pdf) en la parte inferior de esta página. Total 1 Páginas | ||
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13007
NPN Epitaxial Silicon Transistor
HIGH VOLTAGE SWITCH MODE
APPLICATION
Collector-Emitter Voltage: VCEO=400V
Collector Dissipation: PC(max)=80W
Absolute Maximum Ratings (TA=25oC)
Characteristic
Symbol Rating Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
700
400
9
8
80
150
-55~+150
V
V
V
A
W
oC
oC
TO-220
1. Base 2. Collector 3. Emitter
Electrical Characteristics (TA=25oC)
Characteristic
Symbol
Test Conditions
Collector-Emitter Breakdown Voltage
BVCEO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE(1)
hFE(2)
Collector-Emitter Saturation Voltage
VCE(sat1)
VCE(sat2)
VCE(sat3)
Base-emitter Saturation Voltage
VBE(sat1)
VBE(sat2)
Output Capacitance
COB
Current Gain Bandwidth Product
fT
Turn On Time
tON
Storage Time
tSTG
Fall Time
tf
* Pulse Test : PW < 300 s, Duty cycles < 2%
IC=10mA, IB=0
VEB=9V, IC=0
VCE=5V, IC=2A
VCE=5V, IC=5A
IC=2A, IB=0.4A
IC=5A, IB=1A
IC=8A, IB=2A
IC=2A, IB=0.4A
IC=5A, IB=1A
VCB=10V, f=0.1MHz
VCE=10V, IC=0.5A
VCC=125V, IC=5A
1B1=-1B2=1A
RL=50
Min Typ Max Unit
400 V
1 mA
8 60
5 30
1V
2V
3V
1.2 V
1.6 V
110 pF
4 MHz
1.6 µS
3 µS
0.7 µS
Elite Enterprises (H.K.) Co., Ltd.
Flat 2505, 25/F., Nanyang Plaza, 57 Hung To Road, Kwun Tong, H.K.
Tel: (852) 2723-3122 Fax: (852) 2723-3990 Email: [email protected]
Part No.: 13007
Page: 1 / 1
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 13007.PDF ] | |
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