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PDF GT8G131 Data sheet ( Hoja de datos )
| Número de pieza | GT8G131 | |
| Descripción | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G131
GT8G131
Strobe Flash Applications
Unit: mm
· Supplied in Compact and Thin Package Requires Only a Small
Mounting Area
· 4th generation (trench gate structure) IGBT
· Enhancement-mode
· 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A)
· Peak collector current: IC = 150 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 400 V
Gate-emitter voltage
DC VGES
±6
V
Pulse
VGES
±8
Collector current
DC
1 ms
IC
ICP
8
A
150
Collector power dissipation (Note 1)
PC
1.1 W
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
-55~150
°C
Note 1: Drive operation: Mount on glass epoxy board [1 inch2 ´ 1.5 t]
JEDEC
―
JEITA
―
TOSHIBA
2-6J1C
Weight: 0.080 g (typ.)
Equivalent Circuit
8765
These devices are MOS type. Users should follow proper ESD handling procedures.
Operating condition of turn-off dv/dt should be lower than 400 V/ms.
1234
1 2003-03-18
1 page  
Switching Time – RG
20
Common emitter
VCE = 300 V
10 VGE = 4 V
IC = 150 A
Tc = 25°C
5
3 toff
tf tr
ton
1
10
30 50
100
Gate resistance RG (9)
300
GT8G131
VCE, VGE – QG
500
Common emitter
VCE = 300 V
400 RL = 2.0 W
Tc = 25°C
300
200 VGE
100
VCE
0
0 20 40 60
Gate charge QG (nC)
10
8
6
4
2
0
80
10
3
1
0.3
0.1
0
Switching Time – IC
toff
tf
ton
tr Common emitter
VCE = 300 V
VGE = 4 V
RG = 51 W
Tc = 25°C
50 100 150 200
Collector current IC (A)
Maximum Operating Area
800
600
400
VCM = 350 V
200 Tc <= 70°C
VGE = 4 V
20 W <= RG <= 200 W
0
0 40 80
120 160
Peak collector current ICP (A)
200
200
160
120
80
40
0
0
Minimum Gate Drive Area
Tc = 25°C
70°C
246
Gate-emitter voltage VGE (V)
8
5
2003-03-18
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT8G131.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| GT8G131 | N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS) | Toshiba Semiconductor |
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