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PDF GT40T301 Data sheet ( Hoja de datos )
| Número de pieza | GT40T301 | |
| Descripción | Insulated Gate Bipolar Transistor Silicon N Channel IGBT | |
| Fabricantes | Toshiba Semiconductor | |
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GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm
• FRD included between emitter and collector
• Enhancement-mode
• High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A)
FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs)
• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Emitter-collector forward
current
DC
1 ms
Collector power dissipation (Tc =
25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IECF
IECPF
PC
Tj
Tstg
Rating
1500
±25
40
80
30
80
200
150
−55~150
Equivalent Circuit
Collector
Unit
V
V
A
A
W
°C
°C
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1 2002-01-18
1 page  
101 Rth (t) – tw
100
10−1
Diode
IGBT
10−2
10−130−5
10−4
10−3 10−2 10−1
Tc = 25°C
100 101 102
Pulse width tw (s)
GT40T301
IECF – VECF
100
Common collector
80
60 Tc = 40°C
25
40
125
20
0
012345
Emitter-collector forward voltage VECF (V)
2.5 20
2.0 16
Irr, trr – IECF
Common collector
di/dt = −20 A/µs
Tc = 25°C
1.5 12
Irr
1.0 8
trr
0.5 4
00
0 20 40 60 80 100
Emitter-collector forward current IECF (A)
1.0 100
0.8 80
0.6 60
0.4 40
Irr, trr – di/dt
Common collector
IECF = 30 A
Tc = 25°C
trr
0.2 20
Irr
00
0 40 80 120 160 200 240
di/dt (A/µs)
5 2002-01-18
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT40T301.PDF ] | |
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