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Datasheet GT40M301 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | GT40M301 | Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR GT40M301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40M301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l The 3rd Generation
l FRD Included Between Emitter and Collector
l Enhancement−Mode
l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.)
l Low Saturati |  Toshiba Semiconductor | transistor |
GT4 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GT40G121 | Insulated Gate Bipolar Transistor GT40G121
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40G121
The 4th Generation Current Resonance Inverter Switching Applications
Unit: mm
· · ·
Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.8 V (typ.) (IC = 60 A)
Max Toshiba Semiconductor transistor | | |
| 2 | GT40J121 | Discrete IGBTs GT40J121
Discrete IGBTs Silicon N-Channel IGBT
GT40J121
1. Applications
• • Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications The product(s) described herein should not be used for any other application.
Note  Toshiba igbt | | |
| 3 | GT40J321 | Insulated Gate Bipolar Transistor GT40J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40J321
Current Resonance Inverter Switching Application
• • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = Toshiba Semiconductor transistor | | |
| 4 | GT40J322 | Insulated Gate Bipolar Transistor GT40J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40J322
Current Resonance Inverter Switching Application
• • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = Toshiba Semiconductor transistor | | |
| 5 | GT40M101 | SILICON N?묬HANNEL IGBT GT40M101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT40M101
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l High Input Impedance l High Speed l Low Saturation Voltage l Enhancement−Mode
: tf = 0.4µs (Max.) : VCE(sat) = 3.4V (Max.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTER Toshiba Semiconductor igbt | | |
| 6 | GT40M301 | Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR GT40M301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40M301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l The 3rd Generation
l FRD Included Between Emitter and Collector
l Enhancement−Mode
l High Speed IGBT : tf = 0.25µs (TYP.) FRD : trr = 0.7µs (TYP.)
l Low Saturati Toshiba Semiconductor transistor | | |
| 7 | GT40Q321 | Voltage Resonance Inverter Switching Application GT40Q321
TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switching Application
· · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD includ Toshiba Semiconductor inverter | |
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