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What is GT28F800B3B150?

This electronic component, produced by the manufacturer "Intel Corporation", performs the same function as "SMART 3 ADVANCED BOOT BLOCK WORD-WIDE".


GT28F800B3B150 Datasheet PDF - Intel Corporation

Part Number GT28F800B3B150
Description SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
Manufacturers Intel Corporation 
Logo Intel Corporation Logo 


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E
PRELIMINARY
SMART 3 ADVANCED BOOT BLOCK
WORD-WIDE
4-MBIT (256K X 16), 8-MBIT (512K X 16),
16-MBIT (1024K X 16)
FLASH MEMORY FAMILY
28F400B3, 28F800B3, 28F160B3
n Flexible SmartVoltage Technology
2.7V–3.6V Program/Erase
2.7V–3.6V Read Operation
12V VPP Fast Production
Programming
n 2.7V or 1.8V I/O Option
Reduces Overall System Power
n Optimized Block Sizes
Eight 4-KW Blocks for Data,
Top or Bottom Locations
Up to Thirty-One 32-KW Blocks for
Code
n High Performance
2.7V–3.6V: 120 ns Max Access Time
n Block Locking
VCC-Level Control through WP#
n Low Power Consumption
20 mA Maximum Read Current
n Absolute Hardware-Protection
VPP = GND Option
VCC Lockout Voltage
n Extended Temperature Operation
–40°C to +85°C
n Supports Code Plus Data Storage
Optimized for FDI, Flash Data
Integrator Software
Fast Program Suspend Capability
Fast Erase Suspend Capability
n Extended Cycling Capability
10,000 Block Erase Cycles
n Automated Word Program and Block
Erase
Command User Interface
Status Registers
n SRAM-Compatible Write Interface
n Automatic Power Savings Feature
n Reset/Deep Power-Down
1 µA ICCTypical
Spurious Write Lockout
n Standard Surface Mount Packaging
48-Ball µBGA* Package
48-Lead TSOP Package
n Footprint Upgradeable
Upgradeable from 2-, 4- and 8-Mbit
Boot Block
n ETOX™ V (0.4 µ) Flash Technology
The new Smart 3 Advanced Boot Block, manufactured on Intel’s latest 0.4µ technology, represents a feature-
rich solution at overall lower system cost. Smart 3 flash memory devices incorporate low voltage capability
(2.7V read, program and erase) with high-speed, low-power operation. Several new features have been
added, including the ability to drive the I/O at 1.8V, which significantly reduces system active power and
interfaces to 1.8V controllers. A new blocking scheme enables code and data storage within a single device.
Add to this the Intel-developed Flash Data Integrator (FDI) software and you have the most cost-effective,
monolithic code plus data storage solution on the market today. Smart 3 Advanced Boot Block Word-Wide
products will be available in 48-lead TSOP and 48-ball µBGA* packages. Additional information on this
product family can be obtained by accessing Intel’s WWW page: http://www.intel.com/design/flcomp.
May 1997
Order Number: 290580-002

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GT28F800B3B150 equivalent
E
SMART 3 ADVANCED BOOT BLOCK–WORD-WIDE
1.0 INTRODUCTION
This preliminary datasheet contains the
specifications for the Advanced Boot Block flash
memory family, which is optimized for low power,
portable systems. This family of products features
1.8V–2.2V or 2.7V–3.6V I/Os and a low VCC/VPP
operating range of 2.7V–3.6V for read and
program/erase operations. In addition this family is
capable of fast programming at 12V. Throughout
this document, the term “2.7V” refers to the full
voltage range 2.7V–3.6V (except where noted
otherwise) and “VPP = 12V” refers to 12V ±5%.
Section 1 and 2 provides an overview of the flash
memory family including applications, pinouts and
pin descriptions. Section 3 describes the memory
organization and operation for these products.
Finally, Sections 4, 5, 6 and 7 contain the
operating specifications.
1.1 Smart 3 Advanced Boot Block
Flash Memory Enhancements
The new 4-Mbit, 8-Mbit, and 16-Mbit Smart 3
Advanced Boot Block flash memory provides a
convenient upgrade from and/or compatibility to
previous 4-Mbit and 8-Mbit Boot Block products.
The Smart 3 product functions are similar to lower
density products in both command sets and
operation, providing similar pinouts to ease density
upgrades.
The Smart 3 Advanced Boot Block flash memory
features
Enhanced blocking for easy segmentation of
code and data or additional design flexibility
Program Suspend command which permits
program suspend to read
WP# pin to lock and unlock the upper two (or
lower two, depending on location) 4-Kword
blocks
VCCQ input for 1.8V–2.2V on all I/Os. See
Figure 1-4 for pinout diagrams and VCCQ
location
Maximum program time specification for
improved data storage.
Table 1. Smart 3 Advanced Boot Block Feature Summary
Feature
28F160B3
VCC Read Voltage
2.7V– 3.6V
VCCQ I/O Voltage
1.8V–2.2V or 2.7V– 3.6V
VPP Program/Erase Voltage 2.7V– 3.6V or 11.4V– 12.6V
Bus Width
16 bit
Speed
120 ns
Memory Arrangement
256-Kbit x 16 (4-Mbit), 512-Kbit x 16 (8-Mbit),
1024-Kbit x 16 (16-Mbit)
Blocking (top or bottom)
Eight 4-Kword parameter blocks (4/8/16) &
Seven 32-Kword blocks (4-Mbit)
Fifteen 32-Kword blocks (8-Mbit)
Thirty-one 32-Kword main blocks (16-Mbit)
Locking
WP# locks/unlocks parameter blocks
All other blocks protected using VPP switch
Operating Temperature
Extended: –40°C to +85°C
Program/Erase Cycling
10,000 cycles
Packages
48-Lead TSOP, 48-Ball µBGA* CSP
Reference
Table 9, Table 12
Table 9, Table 12
Table 9, Table 12
Table 2
Table 15
Section 2.2
Figures 5 and 6
Section 3.3
Table 8
Table 9, Table 12
Table 9, Table 12
Figures 1, 2, 3,
and 4
PRELIMINARY
5


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Part NumberDescriptionMFRS
GT28F800B3B150The function is SMART 3 ADVANCED BOOT BLOCK WORD-WIDE. Intel CorporationIntel Corporation

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