|
|
Número de pieza | GT25Q301 | |
Descripción | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT25Q301 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! GT25Q301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q301
High Power Switching Applications
Motor Control Applications
Unit: mm
· The 3rd generation
· Enhancement-mode
· High speed: tf = 0.32 µs (max)
· Low saturation voltage: VCE (sat) = 2.7 V (max)
· FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Diode forward current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Rating
1200
±20
25
50
25
50
200
150
−55 to 150
Equivalent Circuit
Unit
V
V
A
A
W
°C
°C
Collector
Gate
Emitter
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1 2003-01-28
1 page C – VCE
10000
3000
1000
Cies
300
100
Common emitter
30
VGE = 0
f = 1 MHz
Tc = 25°C
10
0.1
0.3 1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
IF – VF
50
Common emitter
VGE = 0
40
−40
25
30
20
10 Tc = 125°C
0
01234
Forward voltage VF (V)
5
GT25Q301
1000
800
VCE, VGE – QG
Common emitter
RL = 12 Ω
Tc = 25°C
400
600
600
400 VCE = 200 V
20
16
12
8
200 4
00
0 40 80 120 160 200
Gate charge QG (nC)
trr, Irr – IF
100 1000
30
trr
10
Irr
100
Common emitter
3 di/dt = −200 A/µs
VGE = 0
: Tc = 25°C
: Tc = 125°C
1 10
0 5 10 15 20 25 30
Forward current IF (A)
Safe Operating Area
100
IC max (pulsed)*
50
30 IC max (continuous)
100 µs*
50 µs*
10
5 DC operation
3
*: Single
1 nonrepetitive
pulse Tc = 25°C
0.5 Curves must be
0.3 derated linearly with
increase in
temperature.
0.1
1 3 10 30
1 ms*
10 ms*
100 300 1000 3000
Collector-emitter voltage VCE (V)
Reverse Bias SOA
100
50
30
10
5
3
1
0.5 Tj ≤ 125°C
0.3 VGE = ±15 V
RG = 43 Ω
0.1
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
5 2003-01-28
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet GT25Q301.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT25Q301 | N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) | Toshiba Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |