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PDF GT25Q102 Data sheet ( Hoja de datos )
| Número de pieza | GT25Q102 | |
| Descripción | N CHANNEL IBGT (HIGH POWER SWITCHING APPLICATIONS) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT25Q102
High Power Switching Applications
GT25Q102
Unit: mm
· The 3rd Generation
· Enhancement-Mode
· High Speed: tf = 0.32 µs (max)
· Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
1200
±20
25
50
200
150
-55~150
Unit
V
V
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
1 2003-03-18
1 page  
C – VCE
10000
3000
1000
Cies
300
100
Common emitter
30
VGE = 0
f = 1 MHz
Tc = 25°C
10
0.1
0.3 1
3
Coes
Cres
10 30 100 300 1000
Collector-emitter voltage VCE (V)
Safe operating area
100
IC max (pulsed)*
50
30
IC max
(continuous)
100 ms*
50 ms*
10
5
3
DC
operation
1 ms*
10 ms*
*: Single nonrepetitive
1 pulse
0.5 Tc = 25°C
Curves must be derated
0.3 linearly with increase in
temperature.
0.1
1 3 10 30
100 300 1000 3000
Collector-emitter voltage VCE (V)
GT25Q102
1000
800
VCE, VGE – QG
Common emitter
RL = 12 W
Tc = 25°C
400
600
600
400 VCE = 200 V
20
16
12
8
200 4
00
0 40 80 120 160 200
Gate charge QG (nC)
Reverse bias SOA
100
50
30
10
5
3
1
0.5 Tj <= 125°C
0.3 VGE = ±15 V
RG = 43 W
0.1
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
102 Rth (t) – tw
Tc = 25°C
101
100
10-1
10-2
10-3
10-140-5
10-4
10-3
10-2
10-1 100
101
102
Pulse width tw (s)
5
2003-03-18
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT25Q102.PDF ] | |
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