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What is GT15Q102?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "High Power Switching Applications".


GT15Q102 Datasheet PDF - Toshiba Semiconductor

Part Number GT15Q102
Description High Power Switching Applications
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT15Q102
High Power Switching Applications
GT15Q102
Unit: mm
· The 3rd Generation
· Enhancement-Mode
· High Speed: tf = 0.32 µs (max)
· Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
Tj
Tstg
Rating
1200
±20
15
30
170
150
-55~150
Unit
V
V
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
Weight: 4.6 g
2-16C1C
1 2002-01-18

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GT15Q102 equivalent
3000
C – VCE
1000
300
Cies
100
Common emitter
30 VGE = 0
f = 1 MHz
Tc = 25°C
10
1 3 10
Coes
Cres
30 100 300 1000
Collector-emitter voltage VCE (V)
Safe operating area
100
50 IC max (pulsed)*
30
IC max (continuous)
10
DC
5 operation
3
*: Single
1 nonrepetitive pulse
Tc = 25°C
0.5 Curves must be
0.3 derated linearly with
increase in
temperature.
0.1
1 3 10
30
100 ms*
50 ms*
1 ms*
10 ms*
100 300 1000 3000
Collector-emitter voltage VCE (V)
GT15Q102
VCE, VGE – QG
1000
Common emitter
RL = 40 W
800 Tc = 25°C
20
16
600
400
600
400
VCE = 200 V
200
12
8
4
00
0 40 80 120 160 200
Gate charge QG (nC)
Reverse bias SOA
50
30
10
5
3
1
0.5
Tj <= 125°C
0.3 VGE = ±15 V
RG = 56 W
0.1
1 3 10 30 100 300 1000 3000
Collector-emitter voltage VCE (V)
103
Tc = 25°C
102
Rth (t) – tw
101
100
10-1
10-2
10-3
10-140-5 10-4
10-3 10-2 10-1 100
Pulse width tw (s)
101 102
5
2002-01-18


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Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GT15Q102 electronic component.


Information Total 6 Pages
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Featured Datasheets

Part NumberDescriptionMFRS
GT15Q101The function is N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS). Toshiba SemiconductorToshiba Semiconductor
GT15Q102The function is High Power Switching Applications. Toshiba SemiconductorToshiba Semiconductor

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