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PDF 2SD1664 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1664 | |
| Descripción | NPN Transistor | |
| Fabricantes | JinYu | |
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2SD1664
TRANSISTOR (NPN)
FEATURES
z Low VCE(sat), VCE(sat)=0.15V(typical).(IC/IB=500mA/50mA)
z Complements to 2SB1132
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
32 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous 1 A
PC Collector power dissipation
500 mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55-150
℃
SOT-89
1. BASE
2. COLLECTOR
3. EMITTER
1
2
3
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test conditions
V(BR)CBO IC=50μA, IE=0
V(BR)CEO IC=1mA, IB=0
V(BR)EBO IE=50μA, IC =0
ICBO
VCB=20V, IE=0
IEBO
VEB=4V, IC=0
hFE VCE=3V, IC=100mA
VCE(sat) IC=0.5A, IB=50mA
fT VCE=5V, IC=50mA, f=100MHz
Cob VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40 V
32 V
5V
0.5 μA
0.5 μA
82 390
0.4 V
150 MHz
15 pF
CLASSIFICATION OF hFE
Rank
Range
Marking
P
82-180
DAP
Q
120-270
DAQ
R
180-390
DAR
JinYu
semiconductor
www.htsemi.com
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SD1664.PDF ] | |
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