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What is UPD4265405?

This electronic component, produced by the manufacturer "NEC", performs the same function as "64M-BIT DYNAMIC RAM".


UPD4265405 Datasheet PDF - NEC

Part Number UPD4265405
Description 64M-BIT DYNAMIC RAM
Manufacturers NEC 
Logo NEC Logo 


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DATA SHEET
MOS INTEGRATED CIRCUIT
µPD4264405, 42S65405, 4265405
64 M-BIT DYNAMIC RAM
16 M-WORD BY 4-BIT, EDO
Description
The µPD4264405, 42S65405, 4265405 are 16,777,216 words by 4 bits CMOS dynamic RAMs with optional EDO.
EDO is a kind of the page mode and is useful for the read operation.
Besides, the µPD42S65405 can execute CAS before RAS self refresh.
These are packaged in 32-pin plastic TSOP (II) and 32-pin plastic SOJ.
Features
• EDO (Hyper page mode)
• 16,777,216 words by 4 bits organization
• Single +3.3 V ± 0.3 V power supply
• Fast access and cycle time
Part number
µPD4264405-A50
µPD42S65405-A50, 4265405-A50
µPD4264405-A60
µPD42S65405-A60, 4265405-A60
Power consumption Access time
Active (MAX.)
(MAX.)
360 mW
468 mW
50 ns
324 mW
396 mW
60 ns
R/W cycle time
(MIN.)
84 ns
104 ns
EDO (Hyper page mode)
cycle time (MIN.)
20 ns
25 ns
• The µPD42S65405 can execute CAS before RAS self refresh.
Part number
µPD42S65405
Refrech cycle
4,096 cycles/128 ms
µPD4264405
µPD4265405
8,192 cycles/64 ms
4,096 cycles/64 ms
4,096 cycles/64 ms
Refresh
RAS only refresh, Normal read/write,
CAS before RAS self refresh,
CAS before RAS refresh, Hidden refresh
RAS only refresh, Normal read/write
CAS before RAS refresh, Hidden refresh
RAS only refresh, Normal read/write,
CAS before RAS refresh, Hidden refresh
Power consumption
at standby (MAX.)
0.72 mW
(CMOS level input)
1.8 mW
(CMOS level input)
The information in this document is subject to change without notice.
Document No. M10856EJ6V0DS00 (6th edition)
Date Published September 1997 N
Printed in Japan
The mark shows major revised points.
© 1995

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UPD4265405 equivalent
µPD4264405, 42S65405, 4265405
Input/Output Pin Functions
The µPD4264405, 42S65405, 4265405 have input pins RAS, CAS, WE, OE, AddressNote and input/output
pins I/O1 to I/O4.
Pin name
Input/Output
Function
RAS
(Row address strobe)
CAS
(Column address strobe)
A0 to A×Note
(Address inputs)
WE
(Write enable)
OE
(Output enable)
I/O1 to I/O4
(Data inputs/outputs)
Input
Input
Input
Input
Input
Input/Output
RAS activates the sense amplifier by latching a row address and selecting a
corresponding word line.
It refreshes memory cell array of one line selected by the row address.
It also selects the following function.
• CAS before RAS self refresh, CAS before RAS refresh
CAS activates data input/output circuit by latching column address and
selecting a digit line connected with the sense amplifier.
Address bus.
Input total 24-bit of address signal, upper bits and lower bitsNote in sequence
(address multiplex method).
Therefore, one word is selected from 16,777,216-word by 4-bit memory cell
array.
In actual operation, latch row address by specifying row address and
activating RAS.
Then, switch the address bus to column address and activate CAS.
Each address is taken into the device when RAS and CAS are activated.
Therefore, the address input setup time (tASR, tASC) and hold time (tRAH, tCAH)
are specified for the activation of RAS and CAS.
Write control signal.
Write operation is executed by activating RAS, CAS and WE.
Read control signal.
Read operation can be executed by activating RAS, CAS and OE.
If WE is activated during read operation, OE is to be ineffective in the device.
Therefore, read operation cannot be executed.
4-bit data bus.
I/O1 to I/O4 are used to input/output data.
Note
Part number
µPD4264405
µPD42S65405, 4265405
Address inputs
A0 - A12
A0 - A11
Upper bits
13
12
Lower bits
11
12
5


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On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for UPD4265405 electronic component.


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Featured Datasheets

Part NumberDescriptionMFRS
UPD4265405The function is 64M-BIT DYNAMIC RAM. NECNEC
UPD4265405-A50The function is 64M-BIT DYNAMIC RAM. NECNEC
UPD4265405-A60The function is 64M-BIT DYNAMIC RAM. NECNEC

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