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Datasheet SI2302 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | SI2302 | N-CHANNEL MOSFET SI2302
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 N 沟道 MOS 场效应管。N- CHANNEL MOSFET in a SOT-23 Plastic Package.
特征 / Features
芯片采用超高密度圆胞设计技术，RDS(ON)导通电阻小，SOT-23 封装。 Super high dense cell design for low R |
 BLUE ROCKET ELECTRONICS |
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| 12 | SI2302 | N-Channel Enhancement Mode Field Effect Transistor MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
SI2302
Features
•
• • • • • • • •
Halogen free available upon request by adding suffix "-HF"
20V,3.0A, RDS(ON)=55m¡@VGS=4.5V |
 MCC |
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| 11 | SI2302 | 20V N-Channel Enhancement Mode MOSFET SI2302
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
85m Ω 115mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23
REF. A B C D E F
Millimeter Min. |
 JinYu |
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| 10 | SI2302 | 20V N-Channel Enhancement Mode MOSFET 20V N-Cha
SI2302
VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ RDS(ON), Vgs@ 2.5V, Ids@ 2.0A
3.6A
85m Ω 115mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
G
S
SOT-23
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 |
 VTR |
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