(PDF) PNM723T703E0-2 Datasheet

Número de pieza	PNM723T703E0-2
Descripción	N-Channel MOSFET
Fabricantes	Prisemi
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No Preview Available ! PNM723T703E0-2 N-Channel MOSFET Description PNM723T703E0-2 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance. D（3） VDS(V) 40 MOSFET Product Summary rDS(on)(Ω) VGS(th)(V) 3.5@ VGS=10V 1 to 2.0 ID(A) 0.18 G（1） S（2） Electrical characteristics per line@25℃( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On DelayTime Turn-Off DelayTime Symbol Conditions OFF CHARACTERISTICS VDSS IDSS IGSS VGS(th) RDS(ON) ID =10μA,VGS=0V VDS =40V,VGS=0V VDS =0V,VGS=±20V VDS =VGS, ID =250μA VGS=5V, ID =0.05A VGS=10V, ID =0.5A, DYNAMIC PARAMETERS CISS CDSS CRSS VGS=0V, VDS =25V, f=1MHz SWITCHING PARAMETERS td(on) td(off) VDS=30V, VGS =10V, RG=25Ω, RL=150Ω ID =0.2A Min. Typ. Max. Units 40 - -V - - 0.5 μA - - ±1 μA 1- -V - - 4.5 Ω - - 4.5 Ω - - 40 pF - - 20 pF - - 5 pF - - 20 ns - - 20 ns Rev.06 1 www.prisemi.com 1 page

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