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What is FDS6676S?

This electronic component, produced by the manufacturer "Fairchild Semiconductor", performs the same function as "30V N-Channel PowerTrench SyncFET".


FDS6676S Datasheet PDF - Fairchild Semiconductor

Part Number FDS6676S
Description 30V N-Channel PowerTrench SyncFET
Manufacturers Fairchild Semiconductor 
Logo Fairchild Semiconductor Logo 


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July 2002
FDS6676S
30V N-Channel PowerTrench® SyncFET
General Description
The FDS6676S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6676S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
DC/DC converter
Motor drives
Features
14.5 A, 30 V.
RDS(ON) typ 5.25 m@ VGS = 10 V
RDS(ON) typ 6.00 m@ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (43nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
High power and current handling capability
D
D
D
D
SO-8
G
SS
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6676S
FDS6676S
13’’
5
6
7
8
Ratings
30
±16
14.5
50
2.5
1.2
1
–55 to +150
50
25
Tape width
12mm
4
3
2
1
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS6676S Rev E1 (W)

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FDS6676S equivalent
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676S.
TIME : 12.5ns/div
typ tRR : 31ns
typ IRM : 1.8A
Figure 12. FDS6676S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
0.001
0.0001
TA = 125oC
TA = 100oC
TA = 25oC
0.00001
0
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
typ tRR : 31ns
typ IRM : 2.4A
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
FDS6676S Rev E1 (W)


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