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PDF SSG6612N Data sheet ( Hoja de datos )
| Número de pieza | SSG6612N | |
| Descripción | N-Ch Enhancement Mode Power MOSFET | |
| Fabricantes | SeCoS | |
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Elektronische Bauelemente
SSG6612N
9.4 A, 30 V, RDS(ON) 22 m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
LeaderSize
13’ inch
SOP-8
B
A
HG
LD
M
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
SD
SD
GD
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
Total Power Dissipation 1
Operating Junction & Storage Temperature Range
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
IS
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
Maximum Junction to Ambient a
THERMAL RESISTANCE RATINGS
t ≦ 10 sec
Steady State
RθJA
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
Ratings
30
±20
9.4
7.4
30
1.6
3.1
2
-55 ~ 150
50
92
Unit
V
V
A
A
A
A
W
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
06-Jan-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet SSG6612N.PDF ] | |
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