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PDF APM4800K Data sheet ( Hoja de datos )
| Número de pieza | APM4800K | |
| Descripción | N-Channel Enhancement Mode MOSFET | |
| Fabricantes | Anpec Electronics Coropration | |
| Logotipo |  |
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APM4800K
N-Channel Enhancement Mode MOSFET
Features
• 30V/9A,
RDS(ON) = 15mΩ(typ.) @ VGS = 10V
RDS(ON) = 22mΩ(typ.) @ VGS = 4.5V
Super High Dense Cell Design
• Reliable and Rugged
• SOP-8 Package
• Lead Free Available (RoHS Compliant)
Applications
Pin Description
Top View of SOP − 8
( 5,6,7,8 )
D D DD
• Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
Ordering and Marking Information
(4)
G
SS S
(1, 2, 3)
N-Channel MOSFET
APM4800
Lead Free Code
Handling Code
Temp. Range
Package Code
APM4800 K :
APM4800
XXXXX
Package Code
K : SOP-8
Operating Junction Temp. Range
C : -55 to 150° C
Handling Code
TU : Tube TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering
operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C
for MSL classification at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Sep., 2005
1
www.anpec.com.tw
1 page  
APM4800K
Typical Characteristics (Cont.)
Output Characteristics
35
V = 5, 6, 7, 8, 9, 10V
GS
30
25
20
4V
15
10
3.5V
5
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VDS - Drain - Source Voltage (V)
Drain-Source On Resistance
40
35
30
25 V =4.5V
GS
20
V =10V
GS
15
10
5
0
0 5 10 15 20 25 30 35
ID - Drain Current (A)
Transfer Characteristics
35
30
25
20
15
10
T =125oC
j
T =-55oC
j
5 T =25oC
j
0
0123456
VGS - Gate - Source Voltage (V)
Gate Threshold Voltage
1.6
IDS=250µA
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25 0 25 50 75 100 125 150
Tj - Junction Temperature (°C)
Copyright © ANPEC Electronics Corp.
Rev. B.2 - Sep., 2005
5
www.anpec.com.tw
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet APM4800K.PDF ] | |
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