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PDF SSM4435M Data sheet ( Hoja de datos )
| Número de pieza | SSM4435M | |
| Descripción | P-channel Enhancement-mode Power MOSFET | |
| Fabricantes | Silicon Standard | |
| Logotipo |  |
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SSM4435M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Simple drive requirement
Low on-resistance
Fast switching
Description
D
D
D
D
SO-8
G
S
S
S
Power MOSFETs from Silicon Standard provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial and industrial
surface mount applications and is well suited for low voltage applications
such as DC/DC converters.
BVDSS
R DS(ON)
ID
G
-30V
20mΩ
-8A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
I D @ TA=25°C
I D @ TA=70°C
I DM
PD @ TA=25°C
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-amb
Thermal Resistance Junction-ambient
Rating
- 30
± 20
-8
-6
-50
2.5
0.02
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
Max.
Value
50
Unit
°C/W
Rev.2.02 4/18/2004
www.SiliconStandard.com
1 of 6
1 page  
SSM4435M
14
I D =-4.6A
12 V DS =-15V
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 45 50
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
1000
Coss
Crss
100
1 5 9 13 17 21 25 29
-V DS (V)
Fig 10. Typical Capacitance Characteristics
100.00
10.00
T j =150 o C
1.00
T j =25 o C
0.10
0.01
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
-V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
3
2
1
0
-50
0
50 100 150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage vs.
Junction Temperature
Rev.2.02 4/18/2004
www.SiliconStandard.com
5 of 6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SSM4435M.PDF ] | |
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