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Número de pieza | MCR100-8 | |
Descripción | Sensitive Gate Silicon Controlled Rectifiers | |
Fabricantes | SemiWell | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MCR100-8 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! SemiWell Semiconductor
Sensitive Gate
Silicon Controlled Rectifiers
Features
◆ Repetitive Peak Off-State Voltage : 600V
◆ R.M.S On-State Current ( IT(RMS)= 0.8 A )
◆ Low On-State Voltage (1.2V(Typ.)@ ITM)
General Description
Sensitive triggering SCR is suitable for the application where
gate current limited such as small motor control, gate driver
for large SCR, sensing and detecting circuits.
MCR100-8
Symbol
○
3. Anode
2. Gate
○
○
1. Cathode
TO-92
123
Absolute Maximum Ratings ( TJ = 25°C unless otherwise specified )
Symbol
Parameter
Condition
VDRM
IT(AV)
IT(RMS)
ITSM
I2t
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I2t for Fusing
Half Sine Wave : TC = 74 °C
All Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
PGM
PG(AV)
IFGM
VRGM
TJ
TSTG
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
TA =25°C, Pulse Width ≤ 1.0㎲
TA =25°C, t = 8.3ms
Ratings
600
0.5
0.8
10
0.415
2
0.1
1
5.0
- 40 ~ 125
- 40 ~ 150
Units
V
A
A
A
A2s
W
W
A
V
°C
°C
Oct, 2002. Rev. 2
Information offers: http://www.kkg.com.cn
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
1/5
1 page MCR100-8
TO-92 Package Dimension
mm Inch
Dim.
Min. Typ. Max. Min. Typ. Max.
A 4.2
0.165
B 3.7 0.146
C 4.43
4.83 0.174
0.190
D 14.07
14.87
0.554
0.585
E 0.4 0.016
F 4.43
4.83 0.174
0.190
G 0.45 0.017
H 2.54
0.100
I 2.54
0.100
J 0.33
0.48 0.013
0.019
A
E
B
F
C
G
1
D2
3
HI
1. Cathode
2. Gate
3. Anode
J
Information offers: http://www.kkg.com.cn
5/5
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet MCR100-8.PDF ] |
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