GT5G102 Datasheet PDF - Toshiba Semiconductor
Part Number | GT5G102 | |
Description | Insulated Gate Bipolar Transistor | |
Manufacturers | Toshiba Semiconductor | |
Logo | ||
There is a preview and GT5G102 download ( pdf file ) link at the bottom of this page. Total 3 Pages |
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TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT5G102
Strobe Flash Applications
GT5G102
Unit: mm
· 3rd Generation
· High input impedance
· Low saturation voltage
: VCE (sat) = 8 V (max) (IC = 130 A)
· Enhancement-mode
· 12 V gate drive
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
PC
Tj
Tstg
Equivalent Circuit
Collector
Gate
Rating
400
±20
5
130
1.3
20
150
-55~150
Unit
V
V
A
A
W
W
°C
°C
Emitter
JEDEC
―
JEITA
―
TOSHIBA (A) 2-7B5C (B) 2-7B6C
Weight: 0.036 g
1 2003-03-18
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GT5G102 electronic component. |
Information | Total 3 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ GT5G102.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
GT5G101 | The function is Insulated Gate Bipolar Transistor. Toshiba Semiconductor | |
GT5G102 | The function is Insulated Gate Bipolar Transistor. Toshiba Semiconductor | |
GT5G103 | The function is N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS). Toshiba Semiconductor | |
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