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What is GT5G102?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "Insulated Gate Bipolar Transistor".


GT5G102 Datasheet PDF - Toshiba Semiconductor

Part Number GT5G102
Description Insulated Gate Bipolar Transistor
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


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Preliminary
TOSHIBA Insulated Gate Bipolar Transistor
Silicon N Channel IGBT
GT5G102
Strobe Flash Applications
GT5G102
Unit: mm
· 3rd Generation
· High input impedance
· Low saturation voltage
: VCE (sat) = 8 V (max) (IC = 130 A)
· Enhancement-mode
· 12 V gate drive
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
DC
1 ms
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
PC
PC
Tj
Tstg
Equivalent Circuit
Collector
Gate
Rating
400
±20
5
130
1.3
20
150
-55~150
Unit
V
V
A
A
W
W
°C
°C
Emitter
JEDEC
JEITA
TOSHIBA (A) 2-7B5C (B) 2-7B6C
Weight: 0.036 g
1 2003-03-18


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GT5G102 electronic component.


Information Total 3 Pages
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Download [ GT5G102.PDF Datasheet ]

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Featured Datasheets

Part NumberDescriptionMFRS
GT5G101The function is Insulated Gate Bipolar Transistor. Toshiba SemiconductorToshiba Semiconductor
GT5G102The function is Insulated Gate Bipolar Transistor. Toshiba SemiconductorToshiba Semiconductor
GT5G103The function is N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS). Toshiba SemiconductorToshiba Semiconductor

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