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Número de pieza | GT50J122 | |
Descripción | Insulated Gate Bipolar Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT50J122 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! GT50J122
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J122
Current Resonance Inverter Switching Application
Unit: mm
• Enhancement mode type
• High speed : tf = 0.16 μs (typ.) (IC = 60A)
• Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
• Fourth-generation IGBT
• TO-3P(N) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
VCES 600 V
Gate-emitter voltage
VGES ±25 V
Continuous collector
current
@ Tc = 100°C
@ Tc = 25°C
IC
31
A
50
Pulsed collector current
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
ICP
PC
Tj
Tstg
120
62
156
150
−55 to 150
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
―
―
2-16C1C
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 4.6 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance
Symbol
Rth (j-c)
Max Unit
0.80 °C/W
Marking
TOSHIBA
GT50J122
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2006-11-01
1 page ICmax – Tc
60
Common
emitter
50 VGE = 15 V
40
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
GT50J122
rth (t) – tw
102
Tc = 25°C
101
100
10−1
10−2
10−3
10−5
10−4
10−3
10−2
10−1
100
101
102
Pulse width tw (s)
5 2006-11-01
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet GT50J122.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT50J121 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
GT50J122 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
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