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Número de pieza | GT40J322 | |
Descripción | Insulated Gate Bipolar Transistor | |
Fabricantes | Toshiba Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de GT40J322 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! GT40J322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40J322
Current Resonance Inverter Switching Application
• FRD included between emitter and collector
• Enhancement mode type
• High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A)
• Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
Collector current
Diode forward current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature
DC
1ms
DC
1ms
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
600
± 25
40
100
30
60
120
150
−55 to 150
V
V
A
A
W
°C
°C
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-16C1C
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Equivalent Circuit
Collector
Marking
Gate
Emitter
TOSHIBA
40J322
Part No. (or abbreviation code)
Lot No.
Note 1
1 2009-08-10
1 page 102
101
」
100
10−1
rrtthh ((jt−)c–)t–w tw
Tc = 25°C
Diode stage
IGBT stage
10−2
10−3
10−5
10−4
10−3
10−2
10−1
100
101
102
パPルulスse幅widthtw tw(s)(s)
Common emitter
VGE =0 V
IF – VF
Forward voltage VF (V)
Cj – VR
GT40J322
Irr, trr – IF
300
100
Common emitter
di/dt=-100 A/μs
VGE = 0 V
Tc = 25°C
Forward current IF (A)
Irr, trr – di/dt
Common emitter
IF = 30 A
Tc = 25°C
Reverse voltage VR (V)
di/dt (A/μs)
5 2009-08-10
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet GT40J322.PDF ] |
Número de pieza | Descripción | Fabricantes |
GT40J321 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
GT40J322 | Insulated Gate Bipolar Transistor | Toshiba Semiconductor |
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