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PDF TPC8408 Data sheet ( Hoja de datos )
| Número de pieza | TPC8408 | |
| Descripción | MOSFETs | |
| Fabricantes | Toshiba | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TPC8408 (archivo pdf) en la parte inferior de esta página. Total 14 Páginas | ||
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MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H)
TPC8408
1. Applications
• Mobile Equipments
• Motor Drivers
2. Features
(1) Small footprint due to a small and thin package
(2) High speed switching
(3) Low drain-source on-resistance
P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V),
N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V)
(4) Low leakage current
P-channel IDSS = -10 µA (max) (VDS = -40 V),
N-channel IDSS = 10 µA (max) (VDS = 40 V)
(5) Enhancement mode
P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA),
N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
TPC8408
SOP-8
1: Source 1
2: Gate 1
3: Source 2
4: Gate 2
5, 6: Drain 2
7, 8: Drain 1
Start of commercial production
2011-04
1 2014-01-07
Rev.2.0
1 page  
6.2. Dynamic Characteristics
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
P/N
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
Symbol
Test Condition
Ciss
Crss
Coss
tr
ton
tf
toff
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDS = 10 V, VGS = 0 V,
f = 1 MHz
VDS = -10 V, VGS = 0 V,
f = 1 MHz
VDS = 10 V, VGS = 0 V,
f = 1 MHz
See Figure 6.2.1.
See Figure 6.2.2.
See Figure 6.2.1.
See Figure 6.2.2.
See Figure 6.2.1.
See Figure 6.2.2.
See Figure 6.2.1.
See Figure 6.2.2.
TPC8408
Min Typ. Max Unit
1105
pF
850
135
pF
40
165
pF
145
8.1
2.0
16
7.0
33
2.3
131
17
ns
ns
ns
ns
Fig. 6.2.1 Switching Time Test Circuit (P-ch) Fig. 6.2.2 Switching Time Test Circuit (N-ch)
6.3. Gate Charge Characteristics
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
P/N
P-ch
N-ch
P-ch
N-ch
P-ch
N-ch
Symbol
Test Condition
Qg
Qgs1
Qgd
VDD ≈ -32 V, VGS = -10 V,
ID = -5.3 A
VDD ≈ 32 V, VGS = 10 V,
ID = 6.1 A
VDD ≈ -32 V, VGS = -10 V,
ID = -5.3 A
VDD ≈ 32 V, VGS = 10 V,
ID = 6.1 A
VDD ≈ -32 V, VGS = -10 V,
ID = -5.3 A
VDD ≈ 32 V, VGS = 10 V,
ID = 6.1 A
Min Typ. Max Unit
24 nC
14
3.0 nC
2.6
5.3 nC
2.4
5 2014-01-07
Rev.2.0
5 Page 
TPC8408
Fig. 8.2.7 IDR - VDS
Fig. 8.2.8 Capacitance - VDS
Fig. 8.2.9 Vth - Ta
Fig. 8.2.10 Dynamic Input/Output Characteristics
Fig. 8.2.11 PD - Ta
(Guaranteed Maximum)
11
2014-01-07
Rev.2.0
11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet TPC8408.PDF ] | |
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