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PDF SKIIP83ANB08 Data sheet ( Hoja de datos )
| Número de pieza | SKIIP83ANB08 | |
| Descripción | 3-phase bridge rectifier + IGBT braking chopper | |
| Fabricantes | Semikron | |
| Logotipo |  |
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SKiiP 83 AHB 08
Absolute Maximum Ratings
Symbol Conditions 1)
Bridge Rectifier
VRRM
ID
IFSM/ITSM
I²t
Theatsink = 80 °C
tp = 10 ms; sin. 180 °C, Tj = 25 °C
tp = 10 ms; sin. 180 °C, Tj = 25 °C
IGBT Chopper
VCES
VGES
IC Theatsink = 25 / 80 °C
ICM tp < 1 ms; Theatsink = 25 / 80 °C
Freewheeling Diode 2)
VRRM
IF
IFM
Tj
Tj
Tstg
Visol
Theatsink = 25 / 80 °C
tp < 1 ms; Theatsink = 25 / 80 °C
Diode & IGBT
Thyristor
AC, 1 min.
Characteristics
Symbol Conditions 1)
Diode - Rectifier
VF
VTO
rT
Rthjh
IF = 75 A
Tj = 125 °C
Tj = 125 °C
per diode
Thyristor - Rectifier
Tj = 125 °C
VT
VT (TO)
rT
Rthjh
IGD
VGT
IGT
IH
IL
dv/dtCR
di/dtCR
IF = 120 A Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
per thyristor
Tj = 125 °C
Tj = 25 °C
Tj = 25 °C
Tj = 125 °C
IGBT - Chopper
VCEsat IC = 50 A Tj = 25 (125) °C
td(on)
VCC = 300 V; VGE = ± 15 V
tr
td(off)
IC = 50 A; Tj = 125 °C
Rgon = Rgoff = 22 Ω
tf inductive load
Eon + Eoff
Cies VCE = 25 V; VGE = 0 V, 1 MHz
Rthjh
per IGBT
Values
800
75
1000
5000
600
± 20
50 / 35
100 / 70
600
57 / 38
114 / 76
– 40 ... + 150
– 40 ... + 125
– 40 ... + 125
2500
Units
V
A
A
A²s
MiniSKiiP 8
SEMIKRON integrated
intelligent Power
SKiiP 83 AHB 08
half controlled
3-phase bridge rectifier +
IGBT braking chopper
V Case M8a
V
A
A
V
A
A
°C
°C
°C
V
min. typ. max. Units
– 1,15
– 0,8
– 4,5
––
–V
–V
– mΩ
1,0 K/W
––
––
––
––
5–
––
––
– 250
– 600
500 –
––
1,8 V
1,1 V
5 mΩ
0,9 K/W
– mA
3V
150 mA
– mA
– mA
– V/µs
125 A/µs
– 2,1(2,2) 2,7(2,8) V
– 60
120 ns
– 80
160 ns
– 330
500 ns
– 550
830 ns
– 7,3
– mJ
– 2,8
– nF
––
1,0 K/W
UL recognized file no. E63532
• specification of temperature
sensor see part A
• common characteristics see
page B 16 – 3
Options
• also available with uncontrolled
rectifier (called 82 ANB 08)
• also available with powerful
chopper, data sheet on request
• also available with faster IGBTs
(type ... 063), data sheet on
request
1) Theatsink = 25 °C, unless otherwise
specified
2) CAL = Controlled Axial Lifetime
Technology (soft and fast recovery)
© by SEMIKRON
0698
B 16 – 45
1 page  
2. Common characteristics of MiniSKiiP
MiniSKiiP 600 V
ICop / IC
1.2
1.0
Mini0607
Tj = 150 °C
VGE = ≥ 15 V
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150
Th [°C]
Fig. 7 Rated current of the IGBT ICop / IC = f (Th)
Tj = ≤ 150 °C
VGE = ± 15 V
Tj = ≤ 150 °C
VGE = ± 15 V
tsc = ≤ 10 µs
Lext < 25 nH
Fig. 9 Turn-off safe operating area (RBSOA) of the IGBT Fig. 10 Safe operating area at short circuit of the IGBT
Fig. 11 Typ. freewheeling diode forward characteristic
Fig. 12 Forward characteristic of the input bridge diode
© by SEMIKRON
0698
B 16 – 3
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet SKIIP83ANB08.PDF ] | |
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