FQP6N90C Datasheet PDF - Fairchild Semiconductor
| Part Number | FQP6N90C | |
| Description | 900V N-Channel MOSFET | |
| Manufacturers | Fairchild Semiconductor | |
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FQP6N90C/FQPF6N90C
900V N-Channel MOSFET
QFET TM
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies.
Features
• 6A, 900V, RDS(on) = 2.3Ω @VGS = 10 V
• Low gate charge ( typical 30 nC)
• Low Crss ( typical 11 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
G!
●
◀▲
●
●
!
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM Drain Current - Pulsed
(Note 1)
VGSS
Gate-Source Voltage
EAS Single Pulsed Avalanche Energy
(Note 2)
IAR Avalanche Current
(Note 1)
EAR Repetitive Avalanche Energy
(Note 1)
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
FQP6N90C FQPF6N90C
900
6 6*
3.8 3.8 *
24 24 *
± 30
650
6
16.7
4.5
167 56
1.43 0.48
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
RθJC
RθJS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FQP6N90C
0.75
0.5
62.5
FQPF6N90C
2.25
--
62.5
Units
°C/W
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
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Typical Characteristics (Continued)
100
D = 0.5
1 0 -1
0 .2
0 .1
0 .0 5
1 0 -2
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1. Z θ JC(t) = 0.75 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W a ve P ulse D u ra tio n [se c]
101
Figure 11-1. Transient Thermal Response Curve for FQP6N90C
100 D = 0 .5
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
※ N otes :
1. Z θ JC(t) = 2.3 ℃ /W M ax.
2. D uty F actor, D =t1/t2
3.
T
JM
-
T
C
=
P
DM
*
Zθ
(t)
JC
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S qu a re W a ve P ulse D u ra tio n [se c]
101
Figure 11-2. Transient Thermal Response Curve for FQPF6N90C
©2003 Fairchild Semiconductor Corporation
Rev. A, April 2003
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for FQP6N90C electronic component. |
| Information | Total 10 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ FQP6N90C.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | MFRS |
| FQP6N90 | The function is 900V N-Channel MOSFET. Fairchild Semiconductor | |
| FQP6N90C | The function is 900V N-Channel MOSFET. Fairchild Semiconductor | |
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