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PDF PMV90EN Data sheet ( Hoja de datos )
| Número de pieza | PMV90EN | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | NXP Semiconductors | |
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PMV90EN
30 V, single N-channel Trench MOSFET
Rev. 1 — 13 February 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB)
small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon
drain-source on-state
resistance
Conditions
Tamb = 25 °C
VGS = 10 V; Tamb = 25 °C; t ≤ 5 s
VGS = 10 V; ID = 1.9 A; Tj = 25 °C
Min Typ Max Unit
- - 30 V
-20 -
20 V
[1] - - 2.1 A
- 70 84 mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
G gate
S source
D drain
Simplified outline
3
12
SOT23 (TO-236AB)
Graphic symbol
D
G
S
017aaa253
1 page  
NXP Semiconductors
PMV90EN
30 V, single N-channel Trench MOSFET
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
0.02
0.01
10
017aaa422
10-1
10-5
10-4
10-3
10-2
10-1
1
10 102 103
tp (s)
FR4 PCB, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
103
Zth(j-a)
(K/W)
102
10
duty cycle = 1
0.75
0.33
0.2
0.5
0.25
0.1
0.05
0.02
0.01
10
017aaa423
10-1
10-5
10-4
10-3
10-2
FR4 PCB, mounting pad for drain 6 cm2
10-1
1
10 102 103
tp (s)
Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMV90EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2012
© NXP B.V. 2012. All rights reserved.
5 of 15
5 Page 
NXP Semiconductors
10. Soldering
3.3
2.9
1.9
PMV90EN
30 V, single N-channel Trench MOSFET
3 1.7
2
0.7 0.6
(3×) (3×)
0.5
(3×)
0.6
(3×)
1
Fig 19. Reflow soldering footprint for SOT23 (TO-236AB)
2.2
1.2
(2×)
solder lands
solder resist
solder paste
occupied area
Dimensions in mm
sot023_fr
1.4
(2×)
4.6 2.6
1.4
2.8
4.5
Fig 20. Wave soldering footprint for SOT23 (TO-236AB)
solder lands
solder resist
occupied area
Dimensions in mm
preferred transport direction during soldering
sot023_fw
PMV90EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 February 2012
© NXP B.V. 2012. All rights reserved.
11 of 15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet PMV90EN.PDF ] | |
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