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Número de pieza | PMZ390UN | |
Descripción | N-channel TrenchMOS standard level FET | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
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PMZ390UN
N-channel TrenchMOS standard level FET
Rev. 01 — 12 July 2007
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS technology.
1.2 Features
I Profile 55 % lower than SOT23
I Low on-state resistance
I Leadless package
I Footprint 90 % smaller than SOT23
I Fast switching
I Standard level compatible threshold
1.3 Applications
I Driver circuits
I Load switching in portable appliances
1.4 Quick reference data
I VDS ≤ 30 V
I RDSon ≤ 460 mΩ
I ID ≤ 1.78 A
I Ptot ≤ 2.50 W
2. Pinning information
Table 1.
Pin
1
2
3
Pinning
Description
gate (G)
source (S)
drain (D)
Simplified outline
1
3
2
Transparent
top view
SOT883 (SC-101)
Symbol
D
G
mbb076 S
1 page NXP Semiconductors
PMZ390UN
N-channel TrenchMOS standard level FET
6. Characteristics
Table 5. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter
Static characteristics
V(BR)DSS drain-source breakdown
voltage
VGS(th) gate-source threshold voltage
IDSS drain leakage current
IGSS
RDSon
gate leakage current
drain-source on-state
resistance
Dynamic characteristics
QG(tot) total gate charge
QGS gate-source charge
QGD
gate-drain charge
Ciss input capacitance
Coss output capacitance
Crss reverse transfer capacitance
td(on)
turn-on delay time
tr rise time
td(off)
turn-off delay time
tf fall time
Source-drain diode
VSD source-drain voltage
Conditions
ID = 10 µA; VGS = 0 V
Tj = 25 °C
Tj = −55 °C
ID = 0.25 mA; VDS = VGS; see Figure 9 and 10
Tj = 25 °C
Tj = 150 °C
Tj = −55 °C
VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 150 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 0.2 A; see Figure 6 and 8
Tj = 25 °C
Tj = 150 °C
VGS = 2.5 V; ID = 0.1 A; see Figure 6 and 8
VGS = 1.8 V; ID = 0.075 A; see Figure 6 and 8
ID = 1 A; VDS = 15 V; VGS = 4.5 V;
see Figure 11 and 12
VGS = 0 V; VDS = 25 V; f = 1 MHz;
see Figure 14
VDS = 15 V; RL = 15 Ω; VGS = 10 V; RG = 6 Ω
IS = 0.3 A; VGS = 0 V; see Figure 13
Min Typ Max Unit
30 - - V
27 - - V
0.45 0.7
0.25 -
--
0.95 V
-V
1.15 V
- - 1 µA
- - 100 µA
- 10 100 nA
- 390 460 mΩ
- 663 782 mΩ
- 460 560 mΩ
- 550 730 mΩ
- 0.89 - nC
- 0.1 - nC
- 0.2 - nC
- 43 - pF
- 7.7 - pF
- 4.8 - pF
- 4 - ns
- 7.5 - ns
- 18 - ns
- 4.5 - ns
- 0.76 1.2 V
PMZ390UN_1
Product data sheet
Rev. 01 — 12 July 2007
© NXP B.V. 2007. All rights reserved.
5 of 13
5 Page NXP Semiconductors
9. Revision history
Table 6. Revision history
Document ID
Release date
PMZ390UN _1
20070712
Data sheet status
Product data sheet
PMZ390UN
N-channel TrenchMOS standard level FET
Change notice
-
Supersedes
-
PMZ390UN_1
Product data sheet
Rev. 01 — 12 July 2007
© NXP B.V. 2007. All rights reserved.
11 of 13
11 Page |
Páginas | Total 13 Páginas | |
PDF Descargar | [ Datasheet PMZ390UN.PDF ] |
Número de pieza | Descripción | Fabricantes |
PMZ390UN | N-channel TrenchMOS standard level FET | NXP Semiconductors |
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