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PDF uPG2253T6S Data sheet ( Hoja de datos )
| Número de pieza | uPG2253T6S | |
| Descripción | RF FRONT-END IC | |
| Fabricantes | California Eastern Labs | |
| Logotipo |  |
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GaAs HJ-FET INTEGRATED CIRCUIT
PG2253T6S
RF FRONT-END IC FOR BluetoothTM CLASS 1
DESCRIPTION
The PG2253T6S is a RF front-end integrated circuit for Bluetooth Class 1 and includes TX/Bypass switch and a
power amplifier with low-pass filter. And this device has no RF matching parts.
This device realizes high efficiency and low harmonics by 3.0 V operation. This device is housed in a 16-pin plastic
QFN (Quad Flat Non-leaded) (T6S) package. And this package is able to high-density surface mounting by small
external parts.
FEATURES
• Operating frequency
: fopt = 2 400 to 2 500 MHz (2 450 MHz TYP.)
ended• Supply voltage
: VDD1, 2, 3 = 3.0 V TYP.
• Control voltage
: Ven = 3.0 V TYP.
• Circuit current
: IDD = 95 mA TYP. @ Pin = 0 dBm
• Output power
: Pout = 19 dBm TYP. @ Pin = 0 dBm
• High efficiency
: PAE = 28% TYP. @ Pin = 0 dBm
m• High-density surface mounting : 16-pin plastic QFN package (T6S) (3.0 3.0 0.75 mm)
Not Recom DesignAPPLICATION
• Front-end IC for Bluetooth Class 1, ZigBeeTM etc.
ORDERING INFORMATION
For NewPartNumber
Order Number
Package
PG2253T6S-E2 PG2253T6S-E2-A 16-pin plastic QFN
(T6S) (Pb-Free)
Marking
Supplying Form
G5Y
Embossed tape 8 mm wide
Pin 10, 11, 12 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: PG2253T6S-A
Caution Although this device is designed to be as robust as possible, ESD (Electrostatic
Discharge) can damage this device. This device must be protected at all times from ESD. Static
charges may easily produce potentials of several kilovolts on the human body or equipment, which
can discharge without detection. Industry-standard ESD precautions must be employed at all times.
Document No. PG10761EJ01V0DS (1st edition)
Date Published April 2009 NS
1 page  
PG2253T6S
TYPICAL CHARACTERISTICS
(TA = +25C, VDD1, 2, 3 = 3.0 V, Ven = 3.0 V, VSW1/VSW 2 = 3.0 V/0 V, f = 2.45 GHz, unless otherwise
specified)
NoFt oRreNcoewmmDeesnidgendRemark Thegraphsindicatenominalcharacteristics.
Data Sheet PG10761EJ01V0DS
5
5 Page 
PG2253T6S
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
NoFt oRreNcoewmmDeesnidgend
Data Sheet PG10761EJ01V0DS
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet uPG2253T6S.PDF ] | |
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