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PDF SSG4401P Data sheet ( Hoja de datos )

Número de pieza SSG4401P
Descripción N-Ch Enhancement Mode Power MOSFET
Fabricantes SeCoS Halbleitertechnologie 
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No Preview Available ! SSG4401P Hoja de datos, Descripción, Manual

Elektronische Bauelemente
SSG4401P
-3.6 A, -150 V, RDS(ON) 160 m
P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low RDS(on) and to ensure minimal
power loss and heat dissipation.
FEATURES
Low RDS(on) provides higher efficiency and
extends battery life.
Low thermal impedance copper leadframe
SOP-8 saves board space.
Fast switching speed.
High performance trench technology.
APPLICATION
DC-DC converters and power management
in portable and battery-powered products such
as computers, printers, PCMCIA cards, cellular
and cordless telephones.
PACKAGE INFORMATION
Package
MPQ
SOP-8
2.5K
Leader Size
13’ inch
SOP-8
B
A
HG
LD
M
C
JK
F
N
E
REF.
A
B
C
D
E
F
G
Millimeter
Min. Max.
5.80 6.20
4.80 5.00
3.80 4.00
0° 8°
0.40 0.90
0.19 0.25
1.27 TYP.
REF.
H
J
K
L
M
N
Millimeter
Min. Max.
0.35 0.49
0.375 REF.
45°
1.35 1.75
0.10 0.25
0.25 REF.
SD
SD
SD
GD
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current 1
TA = 25°C
TA = 70°C
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
ID
IDM
IS
Total Power Dissipation 1
TA = 25°C
TA = 70°C
PD
Operating Junction & Storage Temperature Range
TJ, TSTG
Thermal Resistance Ratings
Thermal Resistance Junction-Ambient (Max.) 1 t 10 sec
Steady State
RθJA
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Ratings
-150
±20
-3.6
-3.1
-15
-4.1
3.1
2.2
-55 ~ 150
40
80
Unit
V
V
A
A
A
A
W
W
°C
°C / W
http://www.SeCoSGmbH.com/
10-Sep-2013 Rev. A
Any changes of specification will not be informed individually.
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