MBM29LV800TA-70 Datasheet PDF - Fujitsu
Part Number | MBM29LV800TA-70 | |
Description | 8M (1M X 8/512K X 16) BIT FLASH MEMORY | |
Manufacturers | Fujitsu | |
Logo | ||
There is a preview and MBM29LV800TA-70 download ( pdf file ) link at the bottom of this page. Total 30 Pages |
Preview 1 page No Preview Available ! FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20845-4E
FLASH MEMORY
CMOS
8M (1M × 8/512K × 16) BIT
MBM29LV800TA-70/90/-12/MBM29LV800BA-70/-90/-12
s FEATURES
• Single 3.0 V read, program, and erase
Minimizes system level power requirements
• Compatible with JEDEC-standard commands
Uses same software commands as E2PROMs
• Compatible with JEDEC-standard world-wide pinouts
48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
44-pin SOP (Package suffix: PF)
48-ball FBGA (Package suffix: PBT)
• Minimum 100,000 program/erase cycles
• High performance
70 ns maximum access time
• Sector erase architecture
One 8K word, two 4K words, one 16K word, and fifteen 32K words sectors in word mode
One 16K byte, two 8K bytes, one 32K byte, and fifteen 64K bytes sectors in byte mode
Any combination of sectors can be concurrently erased. Also supports full chip erase
• Boot Code Sector Architecture
T = Top sector
B = Bottom sector
• Embedded EraseTM Algorithms
Automatically pre-programs and erases the chip or any sector
• Embedded ProgramTM Algorithms
Automatically writes and verifies data at specified address
• Data Polling and Toggle Bit feature for detection of program or erase cycle completion
• Ready/Busy output (RY/BY)
Hardware method for detection of program or erase cycle completion
• Automatic sleep mode
When addresses remain stable, automatically switch themselves to low power mode
• Low VCC write inhibit ≤ 2.5 V
• Erase Suspend/Resume
Suspends the erase operation to allow a read in another sector within the same device
(Continued)
Embedded EraseTM and Embedded ProgramTM are trademarks of Advanced Micro Devices, Inc.
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MBM29LV800TA-70/-90/-12/MBM29LV800BA-70/-90/-12
s PRODUCT LINE UP
Part No.
Ordering Part No.
VCC = 3.3 V
+0.3 V
–0.3 V
VCC = 3.0 V
+0.6 V
–0.3 V
Max. Address Access Time (ns)
Max. CE Access Time (ns)
Max. OE Access Time (ns)
s BLOCK DIAGRAM
MBM29LV800TA/MBM29LV800BA
-70 —
—
— -90 -12
70 90 120
70 90 120
30 35
50
V CC
V SS
WE
BYTE
RESET
CE
OE
RY/BY
Buffer
RY/BY
Erase Voltage
Generator
DQ 0 to DQ 15
Input/Output
Buffers
State
Control
Command
Register
Program Voltage
Generator
Chip Enable
Output Enable
Logic
STB Data Latch
A0 to A18
A-1
STB Y-Decoder
Low V CC Detector
Timer for
Program/Erase
Address
Latch
X-Decoder
Y-Gating
Cell Matrix
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for MBM29LV800TA-70 electronic component. |
Information | Total 30 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ MBM29LV800TA-70.PDF Datasheet ] |
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Featured Datasheets
Part Number | Description | MFRS |
MBM29LV800TA-70 | The function is 8M (1M X 8/512K X 16) BIT FLASH MEMORY. Fujitsu | |
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