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Datasheet ASI-T-400NA3MN Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | ASI-T-400NA3MN | LCD Module Specification For LCD Module
ASI-T-400NA3MN/S
REV 1.0
DESCRIPTION FIRST ISSUE
DATE 2012.1.11
ASI-T-400NA3MN/S
TABLE OF CONTENTS 1. OUTLINE DIMENSION 2. INPUT TERMINAL PIN ASSIGNMENT 3. LCD OPTICAL CHARACRERISTICS 4. ELECTRICAL SPECIFICATIONS 5. INPUT DATA FORMAT 6.OPRATING PRINCIPLE & MERHDS 7. |  ASI | lcd |
| 2 | ASI-T-400NA3MNS | LCD Module Specification For LCD Module
ASI-T-400NA3MN/S
REV 1.0
DESCRIPTION FIRST ISSUE
DATE 2012.1.11
ASI-T-400NA3MN/S
TABLE OF CONTENTS 1. OUTLINE DIMENSION 2. INPUT TERMINAL PIN ASSIGNMENT 3. LCD OPTICAL CHARACRERISTICS 4. ELECTRICAL SPECIFICATIONS 5. INPUT DATA FORMAT 6.OPRATING PRINCIPLE & MERHDS 7. | ASI | lcd |
ASI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | ASI-307 | Digital Indicator Digital Indicator Digital Indicator
Model No. ASI - 307 Model No. ASI 307
▸ Features Features
• Peak, Hold, Data Protection(Key Lock), Auto Zero : Front Key or External Signal Terminal Operation • Sampling Speed Control (Max 20Hz) • Auto Calibration, Offset Function
�  Park data | | |
| 2 | ASI-DDC4563-24 | SILICON DETECTOR DIODE
ASI-DDC4563-24 / ASI-MA40232-119
SILICON DETECTOR DIODE
PACKAGE STYLE 207-001
DESCRIPTION:
The MA40232-119 is a Zero Bias Silicon Schottky Barrier Detector Diode.
MAXIMUM RATINGS
PDISS TJ TSTG 200 mW @ TC = 25 C -65 C to +150 C -65 C to +175 C
O O O O O
Ink Dot = Cathode
C  Advanced Semiconductor diode | | |
| 3 | ASI-MA40232-119 | SILICON DETECTOR DIODE
ASI-DDC4563-24 / ASI-MA40232-119
SILICON DETECTOR DIODE
PACKAGE STYLE 207-001
DESCRIPTION:
The MA40232-119 is a Zero Bias Silicon Schottky Barrier Detector Diode.
MAXIMUM RATINGS
PDISS TJ TSTG 200 mW @ TC = 25 C -65 C to +150 C -65 C to +175 C
O O O O O
Ink Dot = Cathode
C Advanced Semiconductor diode | | |
| 4 | ASI-T-400NA3MN | LCD Module Specification For LCD Module
ASI-T-400NA3MN/S
REV 1.0
DESCRIPTION FIRST ISSUE
DATE 2012.1.11
ASI-T-400NA3MN/S
TABLE OF CONTENTS 1. OUTLINE DIMENSION 2. INPUT TERMINAL PIN ASSIGNMENT 3. LCD OPTICAL CHARACRERISTICS 4. ELECTRICAL SPECIFICATIONS 5. INPUT DATA FORMAT 6.OPRATING PRINCIPLE & MERHDS 7. ASI lcd | | |
| 5 | ASI-T-400NA3MNS | LCD Module Specification For LCD Module
ASI-T-400NA3MN/S
REV 1.0
DESCRIPTION FIRST ISSUE
DATE 2012.1.11
ASI-T-400NA3MN/S
TABLE OF CONTENTS 1. OUTLINE DIMENSION 2. INPUT TERMINAL PIN ASSIGNMENT 3. LCD OPTICAL CHARACRERISTICS 4. ELECTRICAL SPECIFICATIONS 5. INPUT DATA FORMAT 6.OPRATING PRINCIPLE & MERHDS 7. ASI lcd | | |
| 6 | ASI-T-400NA3MS | LCD Module Specification For LCD Module
ASI-T-400NA3MN/S
REV 1.0
DESCRIPTION FIRST ISSUE
DATE 2012.1.11
ASI-T-400NA3MN/S
TABLE OF CONTENTS 1. OUTLINE DIMENSION 2. INPUT TERMINAL PIN ASSIGNMENT 3. LCD OPTICAL CHARACRERISTICS 4. ELECTRICAL SPECIFICATIONS 5. INPUT DATA FORMAT 6.OPRATING PRINCIPLE & MERHDS 7. ASI lcd | | |
| 7 | ASI-T-400NA3S | LCD Module Specification For LCD Module
ASI-T-400NA3MN/S
REV 1.0
DESCRIPTION FIRST ISSUE
DATE 2012.1.11
ASI-T-400NA3MN/S
TABLE OF CONTENTS 1. OUTLINE DIMENSION 2. INPUT TERMINAL PIN ASSIGNMENT 3. LCD OPTICAL CHARACRERISTICS 4. ELECTRICAL SPECIFICATIONS 5. INPUT DATA FORMAT 6.OPRATING PRINCIPLE & MERHDS 7. ASI lcd | | |
| 8 | ASI1001 | NPN SILICON RF POWER TRANSISTOR ASI1001
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES:
• PG = 12 dB min.at 1.0 W / 1,000 MHz • Hermetic Microstrip Package • O Advanced Semiconductor transistor | | |
| 9 | ASI1002 | NPN SILICON RF POWER TRANSISTOR ASI1002
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI 1002 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES:
• PG = 12 dB min at 2 W / 1,000 MHz • Hermetic Microstrip Package • Om Advanced Semiconductor transistor | |
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