DataSheet39.com

What is GT60J323?

This electronic component, produced by the manufacturer "Toshiba Semiconductor", performs the same function as "Insulated Gate Bipolar Transistor Silicon N Channel IGBT".


GT60J323 Datasheet PDF - Toshiba Semiconductor

Part Number GT60J323
Description Insulated Gate Bipolar Transistor Silicon N Channel IGBT
Manufacturers Toshiba Semiconductor 
Logo Toshiba Semiconductor Logo 


There is a preview and GT60J323 download ( pdf file ) link at the bottom of this page.





Total 6 Pages



Preview 1 page

No Preview Available ! GT60J323 datasheet, circuit

GT60J323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J323
Current Resonance Inverter Switching Application
Unit: mm
Enhancement mode type
High speed : tf = 0.16 μs (typ.) (IC = 60A)
Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
FRD included between emitter and collector
Fourth generation IGBT
TO-3P(LH) (Toshiba package name)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Continuous collector @ Tc = 100°C
current
@ Tc = 25°C
Pulsed collector current
DC
Diode forward current
Pulsed
Collector power
dissipation
@ Tc = 100°C
@ Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCES
VGES
IC
ICP
IF
IFP
PC
Tj
Tstg
Rating
600
±25
33
60
120
30
120
68
170
150
55 to 150
Unit
V
V
A
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-21F2C
Weight: 9.75 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
Rth (j-c)
Rth (j-c)
Max
0.74
1.56
Unit
°C/W
°C/W
Equivalent Circuit
Marking
Gate
Collector
Emitter
TOSHIBA
GT60J323
JAPAN
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-11-01

line_dark_gray
GT60J323 equivalent
ICmax – Tc
70
Common
emitter
60 VGE = 15 V
50
40
30
20
10
0
25 50 75 100 125 150
Case temperature Tc (°C)
GT60J323
rth (t) – tw
103
Tc = 25°C
102
101
100
101
Diode stage
IGBT stage
102
103
105
104
103
102
101
100
101
102
Pulse width tw (s)
IF – VF
100
Common emitter
VGE = 0
80
60
40
25
20 Tc = 125°C
40
0
0 0.4 0.8 1.2 1.6 2.0
Forward voltage VF (V)
Irr, trr – IF
50 500
30 300
10
trr
5
100
50
3 Irr
Common emitter
30
di/dt = 100 A/μs
VGE = 0
Tc = 25°C
1 10
0 5 10 15 20 25 30
Forward current IF (A)
1000
500
300
f = 1 MHz
Tc = 25°C
Cj – VR
100
50
30
10
5
3
1
3 5 10
30 50 100
300 500
Reverse voltage VR (V)
200 10
8
Irr, trr – di/dt
Common emitter
IF = 30 A
Tc = 25°C
6 trr
100
4
Irr
2
00
0 40 80 120 160 200
di/dt (A/μs)
5 2006-11-01


line_dark_gray

Preview 5 Page


Part Details

On this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for GT60J323 electronic component.


Information Total 6 Pages
Link URL [ Copy URL to Clipboard ]
Download [ GT60J323.PDF Datasheet ]

Share Link :

Electronic Components Distributor


An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists.


SparkFun Electronics Allied Electronics DigiKey Electronics Arrow Electronics
Mouser Electronics Adafruit Newark Chip One Stop


Featured Datasheets

Part NumberDescriptionMFRS
GT60J321The function is The 4th Generation Soft Switching Applications. ToshibaToshiba
GT60J322The function is Insulated Gate Bipolar Transistor Silicon N Channel IGBT. Toshiba SemiconductorToshiba Semiconductor
GT60J323The function is Insulated Gate Bipolar Transistor Silicon N Channel IGBT. Toshiba SemiconductorToshiba Semiconductor

Semiconductors commonly used in industry:

1N4148   |   BAW56   |   1N5400   |   NE555   |  

LM324   |   BC327   |   IRF840  |   2N3904   |  



Quick jump to:

GT60     1N4     2N2     2SA     2SC     74H     BC     HCF     IRF     KA    

LA     LM     MC     NE     ST     STK     TDA     TL     UA    



Privacy Policy   |    Contact Us     |    New    |    Search