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Datasheet 1111J1000222GQT Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 1111J1000222GQT | High Q capacitors [email protected] www.syfer.com
High Q capacitors
MS range
+44 1603 723310 +44 1603 723301
The Syfer MS range offers a very stable, High Q material system that provides excellent, low loss performance in systems below 3GHz. Available in 0402 to 3640 case sizes with various termination options in |  Syfer Technology | capacitor |
111 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 1110A | Diode, Rectifier American Microsemiconductor diode | | |
| 2 | 1110A | 200 V - 1000 V Single Phase Bridge 200 V - 1,000 V Single Phase Bridge
1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time
1102A - 1110A 1102FA - 1110FA 1102UFA - 1110UFA
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC (Io) 55°C Volts 1102A 1106A 1110A  ETC data | | |
| 3 | 1110B | Diode, Rectifier American Microsemiconductor diode | | |
| 4 | 1110B | (1110xB) Single Phase Bridge
200 V - 1,000 V Single Phase Bridge
1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time
1102B - 1110B 1102FB - 1110FB 1102UFB - 1110UFB
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC (Io) 55°C Vo  VMI data | | |
| 5 | 1110C | Diode, Rectifier American Microsemiconductor diode | | |
| 6 | 1110C | (1110xC) Single Phase Bridge
200 V - 1,000 V Single Phase Bridge
1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time
1102C - 1110C 1102FC - 1110FC 1102UFC - 1110UFC
ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS
Part Number Working Reverse Voltage (Vrwm) Average Rectified Current @TC (Io) 55°C Vo VMI data | | |
| 7 | 1110D | Diode, Rectifier American Microsemiconductor diode | |
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| Número de pieza | Descripción | Fabricantes | |
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