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PDF Z0103MA Data sheet ( Hoja de datos )
| Número de pieza | Z0103MA | |
| Descripción | Silicon Bidirectional Thyristor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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 1. - 1A, 600V, Standard Triac  Hay una vista previa y un enlace de descarga de Z0103MA (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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Z0103MA
Sensitive Gate Triacs
Series
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
any other light industrial or consumer application. Supplied in an
inexpensive T O−92 package which is readily adaptable for use in
automatic insertion equipment.
Features
• One−Piece, Injection−Molded Package
• Blocking Voltage to 600 V
• Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all
possible Combinations of Trigger Sources, and especially for Circuits
that Source Gate Drives
• All Diffused and Glassivated Junctions for Maximum Uniformity of
Parameters and Reliability
• Improved Noise Immunity (dv/dt Minimum of 10 V/msec at 110°C)
• Commutating di/dt of 1.6 A/msec at 110°C
• High Surge Current of 8 A
• These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off-State Voltage
(TJ = −40 to +125°C)(1)
Sine Wave 50 to 60 Hz, Gate Open
VDRM,
VRRM
600
V
On-State RMS Current
Full Cycle Sine Wave 50 to 60 Hz
(TC = 50°C)
Peak Non−Repetitive Surge Current
One Full Cycle, Sine Wave 60 Hz
(TC = 110°C)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS)
1.0
A
ITSM
8.0
A
I2t
0.35
A2s
Average Gate Power (TC = 80°C, t v 8.3 ms)
Peak Gate Current (t v 20 ms, TJ = +125°C)
Operating Junction Temperature Range
PG(AV)
IGM
TJ
1.0
1.0
−40 to
+125
W
A
°C
Storage Temperature Range
Tstg −40 to °C
+150
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
1.0 AMPERE RMS
600 VOLTS
MT2
MT1
G
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
TO−92 (TO−226AA)
CASE 029
STYLE 12
MARKING DIAGRAM
Z0
10xMA
YWW G
G
1 23
x = 3,7,9
Y = Year
WW = Work Week
G = Pb−Free Package
(*Note: Microdot may be in either location)
PIN ASSIGNMENT
1 Main Terminal 1
2 Gate
3 Main Terminal 2
© Semiconductor Components Industries, LLC, 2012
January, 2012− Rev. 4
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1 Publication Order Number:
Z0103MA/D
http://www.Datasheet4U.com
1 page  
Z0103MA
1. 10
0
ZQJC(t) = RQJC(t) @ r(t)
5.0
0.1 3.0
2.0
TJ = 110°C
f = 60 Hz
CYCLE
0.01
0.1
1.0
10
100 1•103 1•104
t, TIME (ms)
Figure 5. Transient Thermal Response
100
10 Q4
Q3
Q2
Q1
1
0
-40 -25
-10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 7. Typical Gate Trigger Current versus
Junction Temperature
1.0
1.0
Surge is preceded and followed by rated current.
2.0 3.0 5.0
10
30
NUMBER OF CYCLES
50
100
Figure 6. Maximum Allowable Surge Current
1.2
1.1 Q4
1.0 Q3
0.9 Q2
0.8 Q1
0.7
0.6
0.5
0.4
0.3
-40 -25
-10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 8. Typical Gate Trigger Voltage versus
Junction Temperature
100 10
10 Q2
MT2 Negative
Q4 Q3
1
MT2 Positive
1
Q1
0
-40 -25
-10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 9. Typical Latching Current versus
Junction Temperature
0.1
-40 -25
-10 5 20 35 50 65 80
TJ, JUNCTION TEMPERATURE (°C)
95 110
Figure 10. Typical Holding Current versus
Junction Temperature
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet Z0103MA.PDF ] | |
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