STP8NM60ND Datasheet PDF - STMicroelectronics
Part Number | STP8NM60ND | |
Description | Power MOSFET ( Transistor ) | |
Manufacturers | STMicroelectronics | |
Logo | ||
There is a preview and STP8NM60ND download ( pdf file ) link at the bottom of this page. Total 17 Pages |
Preview 1 page No Preview Available ! STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
650 V
650 V
650 V
650 V
< 0.70 Ω
< 0.70 Ω
< 0.70 Ω
< 0.70 Ω
7A
7A
7 A(1)
7A
1. Limited only by maximum temperature allowed
■ The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche
capabilities
Application
■ Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Table 1. Device summary
Order codes
Marking
STD8NM60ND
STF8NM60ND
STP8NM60ND
STU8NM60ND
8NM60ND
8NM60ND
8NM60ND
8NM60ND
3
2
1
TO-220
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Package
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
Tube
February 2009
Rev 1
1/17
www.st.com
17
http://www.Datasheet4U.com
|
|
STx8NM60ND
Electrical characteristics
Table 7.
Symbol
Switching times
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
VDD = 300 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
Figure 18,
Figure 23
Min.
Typ. Max. Unit
9 ns
22 ns
37 ns
22 ns
Table 8.
Symbol
Source drain diode
Parameter
Test conditions
ISD
ISDM (1)
VSD(2)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, VGS = 0
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V,
Figure 20
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A,
di/dt = 100 A/µs,
VDD = 30 V, Tj=150°C
Figure 20
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
Typ.
120
0.49
8
Max. Unit
7A
28 A
1.3 V
ns
µC
A
170 ns
0.75 µC
9A
5/17
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Information | Total 17 Pages | |
Link URL | [ Copy URL to Clipboard ] | |
Download | [ STP8NM60ND.PDF Datasheet ] |
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