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Número de pieza | IXTH152N085T | |
Descripción | N-Channel Enhancement Mode Avalanche Rated | |
Fabricantes | IXYS Corporation | |
Logotipo | ||
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No Preview Available ! Preliminary Technical Information
TrenchMVTM
Power MOSFET
IXTH152N085T
IXTQ152N085T
N-Channel Enhancement Mode
Avalanche Rated
VDSS =8 5
ID25 = 152
RDS(on) ≤ 7.0
V
A
mΩ
Symbol
VDSS
VDGR
VGSM
ID25
IIDLRMMS
IAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C; RGS = 1 MΩ
Transient
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by T JM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 175°C, RG = 5 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting torque
TO-3P
TO-247
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0 V, ID = 250 μA
VGS(th)
VDS = VGS, ID = 250 μA
IGSS VGS = ± 20 V, VDS = 0 V
IDSS
VDS = VDSS
VGS = 0 V
TJ = 150°C
RDS(on)
VGS = 10 V, ID = 25 A, Notes 1, 2
© 2006 IXYS CORPORATION All rights reserved
Maximum Ratings
85
85
± 20
152
75
410
25
750
V
V
V
A
A
A
A
mJ
3 V/ns
360 W
-55 ... +175
175
-55 ... +175
°C
°C
°C
300 °C
260 °C
1.13 / 10 Nm/lb.in.
5.5 g
6g
Characteristic Values
Min. Typ. Max.
85 V
2.0 4.0 V
± 200 nA
5 μA
250 μA
5.5 7.0 mΩ
TO-247 (IXTH)
G
DS
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- 42V Power Bus
- ABS Systems
DC/DC Converters and Off-line UPS
Primary Switch for 24V and 48V
Systems
High Current Switching
Applications
DS99699 (11/06)
http://www.Datasheet4U.com
1 page 60
55
50
45
40
35
30
25
20
15
10
25
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
RG = 5Ω
VGS = 10V
VDS = 43V
I D = 50A
I D = 25A
35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
110 43
100 t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
90 VDS = 43V
80
41
39
37
70 I D = 25A
60
35
33
50 31
40 29
I D = 50A
30 27
20 25
10 23
4 6 8 101 21 41 61 8 20
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
46
80
45
44
43 t f
td(off) - - - -
RG = 5Ω, VGS = 10V
42 VDS = 43V
TJ = 25ºC
TJ = 125ºC
75
70
65
60
41
TJ = 125ºC
55
40 50
T J = 25ºC
39 45
24 28 32 36 40 44 48
ID - Amperes
© 2006 IXYS CORPORATION All rights reserved
IXTH152N085T
IXTQ152N085T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
60
55
50 TJ = 25ºC
45 RG = 5Ω
40 VGS = 10V
VDS = 43V
35
30
25
20
TJ = 125ºC
15
10
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
47
tf
td(off) - - - -
76
46 RG = 5Ω, VGS = 10V
72
VDS = 43V
45 68
44
43
I D = 25A
42
41
64
I D = 50A
60
56
52
40 48
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times v s. Gate Resistance
130 220
120 200
110 180
I D = 25A
100 160
90 140
80
I D = 50A
120
70 100
60 80
50
tf
td(off) - - - -
60
TJ = 125ºC, VGS = 10V
40
VDS = 43V
40
30 20
4 6 8 101 2 141 6 182 0
RG - Ohms
IXYS REF: T_152N085T (4V) 6-12-06.xls
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet IXTH152N085T.PDF ] |
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