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PDF HBNP5213G6 Data sheet ( Hoja de datos )
| Número de pieza | HBNP5213G6 | |
| Descripción | NPN AND PNP Dual Epitaxial Planar Transistors | |
| Fabricantes | CYStech Electronics | |
| Logotipo |  |
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CYStech Electronics Corp.
NPN AND PNP Dual Epitaxial Planar Transistors
HBNP5213G6
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 1/9
Features
• High BVCEO
• High current
• Excellent DC current gain characteristics
• Pb-free lead plating and halogen-free package
Equivalent Circuit
HBNP5213G6
Outline
TSOP-6
C2
E1
C1
B : Base E : Emitter C : Collector
B2
E2
B1
Ordering Information
Device
HBNP5213G6-0-T1-G
Package
TSOP-6
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP5213G6
CYStek Product Specification
http://www.Datasheet4U.com
1 page  
CYStech Electronics Corp.
Spec. No. : C627G6
Issued Date : 2013.10.17
Revised Date :
Page No. : 5/9
Q2, PNP Typical Characteristics
Current Gain vs Collector Current
1000
VCE=3V
100 VCE=2V
VCE=1V
10000
1000
100
Saturation Voltage vs Collector Current
VCESAT
IC=100IB
IC=50IB
IC=20IB
IC=10IB
10
1
10 100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
10
1
1000
10 100
Collector Current---IC (mA)
On Voltage vs Collector Current
1000
VBESAT@IC=10IB
VBEON@VCE=3V
100
1
1000
10 100
Collector Current---IC (mA)
1000
Transition Frequency vs Collector Current
100
1
100
10 100
Collector Current---IC(mA)
Capacitance Characteristics
1000
100 10
10
1
10 100
Collector Current---IC(mA)
1
1000 1
10 100
Reverse-biased Collector Base Voltage---VCB(V)
HBNP5213G6
CYStek Product Specification
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HBNP5213G6.PDF ] | |
Hoja de datos destacado
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