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PDF K2993 Data sheet ( Hoja de datos )
| Número de pieza | K2993 | |
| Descripción | MOSFET ( Transistor ) - 2SK2993 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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2SK2993
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2993
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Unit: mm
l Low drain−source ON resistance : RDS (ON) = 82 mΩ (typ.)
l High forward transfer admittance : |Yfs| = 20 S (typ.)
l Low leakage current : IDSS = 100 µA (max) (VDS = 250 V)
l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics S
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Not e 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Not e 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
ymbol
VDSS
VDGR
VGSS ±
ID
IDP
PD 100
EAS 423
IAR
EAR 10
Tch 150
Tstg
Rating
250
250
20
20
60
20
−55~150 °
Unit
V
V
V
A
W
mJ
A
mJ
°C
C
JEDEC
―
JEITA
―
TOSHIBA 2-10S1B
Weight: 1.5 g (typ.)
Thermal Characteristics
Characteristics S
ymbol Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c) 1.
Rth (ch−a) 83.
25
3
°C / W
°C / W
Note 1: Please u se d evices o n co ndition t hat t he channel te mperature is
below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 mH, IAR = 20 A,
RG = 25 Ω
Note 3: Repetitive rating; Pulse width limited by maximum channel
temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1 2002-01-25
http://www.Datasheet4U.com
1 page  
2SK2993
RG = 25 Ω
VDD = 90 V, L = 1.79 mH
EAS
=
1
2
×L
× I2
× çæ
è
BVDSS
BVDSS - VDD
÷ö
ø
5 2002-01-25
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2993.PDF ] | |
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