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PDF TK3P50D Data sheet ( Hoja de datos )

Número de pieza TK3P50D
Descripción MOSFETs Silicon N-Channel MOS
Fabricantes Toshiba 
Logotipo Toshiba Logotipo



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No Preview Available ! TK3P50D Hoja de datos, Descripción, Manual

MOSFETs Silicon N-Channel MOS (π-MOS)
TK3P50D
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R
= 2.3 (typ.)
(2) High forward transfer admittanceD: |S(YON|) = 1.0 S (typ.)
(3) Low leakage current: I = 10 µA (mafsx) (V = 500 V)
(4) Enhancement mode: VtDhS=S 2.4 to 4.4 V (VDS D=S10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK3P50D
1: Gate (G)
2: Drain (D)(HEAT SINK)
3: Source (S)
DPAK
4. Absolute Maximum Ratings (Note) (T = 25unless otherwise specified)
Characteristics
a
Symbol
Rating
Unit
Drain-source voltage
VDSS 500 V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
3A
Drain current (pulsed)
(Note 1)
IDP
6
Power dissipation
(Tc = 25)
PD 60 W
Single-pulse avalanche energy
(Note 2)
EAS
81 mJ
Avalanche current
IAR 3 A
Repetitive avalanche energy
(Note 3)
EAR
6 mJ
Channel temperature
Tch 150
Storage temperature
Tstg -55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2011-04-30
Rev.1.0
http://www.Datasheet4U.com

1 page




TK3P50D pdf
8. Characteristics Curves (Note)
TK3P50D
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 |Yfs| - ID
Fig. 8.6 RDS(ON) - ID
5 2011-04-30
Rev.1.0

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