(PDF) SPP6307 Datasheet - P-Channel Enhancement Mode MOSFET

Número de pieza	SPP6307
Descripción	P-Channel Enhancement Mode MOSFET
Fabricantes	SYNC POWER
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No Preview Available ! SPP6307 P-Channel Enhancement Mode MOSFET DESCRIPTION The SPP6307 is t he P-Channel enhancement m ode power field effect transistors are produced using high cell density , D MOS trench technolog y. This high densit y process is especi ally tailored to minim ize on-state resistance an d provi de superior switching perform ance. These devic es are particu larly suited for low voltage applications such as noteboo k co mputer power management and other battery powered circuits where high-side s witching , low in-line power los s, and resistance to transients are needed. APPLICATIONS  Drivers : Relays/Solenoids/Lamps/Hammers  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers FEATURES  P-Channel -20V/0.45A,RDS(ON)= 0.65Ω@VGS=-4.5V -20V/0.35A,RDS(ON)= 0.90Ω@VGS=-2.5V -20V/0.25A,RDS(ON)= 1.5Ω@VGS=-1.8V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-363 package design PIN CONFIGURATION( SOT-363 ) PART MARKING 2013/11/20 Ver.1 Page 1 http://www.Datasheet4U.com 1 page SPP6307 P-Channel Enhancement Mode MOSFET TYPICAL CHA RACTERISTICS 2013/11/20 Ver.1 Page 5 5 Page

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PDF SPP6307 Data sheet ( Hoja de datos )