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PDF 74LVCE1G125 Data sheet ( Hoja de datos )
| Número de pieza | 74LVCE1G125 | |
| Descripción | SINGLE BUFFER GATE | |
| Fabricantes | DIODES | |
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74LVCE1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Description
Pin Assignments
The 74LVCE1G125 is a single non-inverting buffer/bus driver
with a 3-state output. T he out put enters a high impedance
state when a HIGH-level is applied to the output en able (OE)
pin. The device is designed for operation with a power supply
range of 1.4V to 5.5V. T he inputs are t olerant to 5.5 V
allowing this devic e to be us ed i n a mi xed v oltage
environment. The device is full y s pecified for partial po wer
down a pplications usin g I OFF. The I OFF circuitry dis ables the
output preventing damaging current backflow when the device
is powered down.
(Top View)
OE 1
5 Vcc
A2
GND 3
4Y
SOT25 / SOT353
Features
• Extended Supply Voltage Range from 1.4 to 5.5V
• Switching speed characterized for operation at 1.5V
• Offers 30% speed improvement over LVC at 1.8V.
• ± 24mA Output Drive at 3.3V
• CMOS low power consumption
• IOFF Supports Partial-Power-Down Mode Operation
• Inputs accept up to 5.5V
• ESD Protection Tested per JESD 22
Exceeds 200-V Machine Model (A115-A)
Exceeds 2000-V Human Body Model (A114-A)
• Latch-Up Exceeds 100mA per JESD 78, Class II
• Range of Package Options
• Direct Interface with TTL Levels
• SOT25, SOT353 and DFN1410: Assembled with “Green”
Molding Compound (no Br, Sb)
• Lead Free Finish/ RoHS Compliant (Note 1)
(Top View)
OE 1
A2
GND 3
6 Vcc
5 NC
4Y
DFN1410 (Note 2)
Applications
• Voltag e Level Shifting
• Bus Driver / Repeater
• Power Down Signal Isolation
• General Purpose Logic
• Wide array of products such as.
o PCs, networking, notebooks, netbooks, PDAs
o Computer peripherals, hard drives, CD/DVD ROM
o TV, DVD, DVR, set top box
o Cell Phones, Personal Navigation / GPS
o MP3 players ,Cameras, Video Recorders
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at
http://www.diodes.com/products/lead_free.html.
2. Pin 2 and pin 5 of the DFN1410 package are internally connected.
74LVCE1G125
Document number: DS32216 Rev. 2 - 2
1 of 14
www.diodes.com
December 2010
© Diodes Incorporated
http://www.Datasheet4U.com
1 page  
74LVCE1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Electrical Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)
Over recommended free-air temperature range (unless otherwise noted)
Symbol
Parameter
Test Conditions
IOH = -100μA
IOH = -3mA
VOH
High Level Output
Voltage
IOH = -4mA
IOH = -8mA
IOH = -16mA
IOH = -24mA
IOH = -32mA
IOL = 100μA
IOL = 3mA
IOL = 4mA
VOL High-level Input Voltage IOL = 8mA
IOL = 16mA
IOL = 24mA
IOL = 32mA
II Input Current
VI = 5.5 V or GND
IOFF
Power Down Leakage VI or VO = 5.5V
Current
Vcc Min Typ. Max Unit
1.4 V to 5.5V VCC – 0.1
1.4 V
1.05
1.65 V
1.2
2.3V
1.9
V
2.4
3V
2.3
4.5 V
3.8
1.4 V to 5.5V
0.1
1.4V
.4
1.65 V
0.45
2.3V
0.3 V
0.4
3V
0.55
4.5 0.55
0 to 5.5 V
± 5 μA
0 ± 10 μA
IOZ
Z State
Leakage Current
VO =0 to 5.5V
3.6V
10 μA
ICC Supply Current
ΔICC
Additional Supply
Current
Ci Input Capacitance
θJA
Thermal Resistance
Junction-to-Ambient
VI = 5.5V of GND
IO=0
One input at VCC –
0.6 V Other inputs
at VCC or GND
Vi = VCC – or GND
SOT25 (Note
SOT353 (Note
DFN1410 (Note
1.4 V to 5.5V
3 V to 5.5V
3.3
5)
5)
5)
10 μA
500 μA
3.5 pF
204
371 oC/W
430
θJC
Thermal Resistance
Junction-to-Case
SOT25 (Note
SOT353
DFN1410 (Note
5)
(Note 5)
5)
52
143 oC/W
190
Note: 5. Test condition for SOT25, SOT353 and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.
74LVCE1G125
Document number: DS32216 Rev. 2 - 2
5 of 14
www.diodes.com
December 2010
© Diodes Incorporated
5 Page 
74LVCE1G125
SINGLE BUFFER GATE WITH 3-STATE OUTPUT
Package Outline Dimensions (All Dimensions in mm)
(1) Package Type: SOT25
(2) Package Type: SOT353
CL
0.10/0.30
6x-0.42
CL
1.3
2x-0.65
CL
CL
PIN 1
0.40/0.45
0.65Bsc.
Land Pattern Recommendation
(unit:mm) Top View
CL
0.25/0.40
Detail"A"
Gauge Plane
1.8/2.2
"A"
74LVCE1G125
Document number: DS32216 Rev. 2 - 2
11 of 14
www.diodes.com
December 2010
© Diodes Incorporated
11 Page | ||
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