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PDF PMEG45A10EPD Data sheet ( Hoja de datos )
| Número de pieza | PMEG45A10EPD | |
| Descripción | 10 A low VF MEGA Schottky barrier rectifier | |
| Fabricantes | NXP Semiconductors | |
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PMEG45A10EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
16 April 2014
Product data sheet
1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOT1289 (CFP15) power
and flat lead Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
• Average forward current: IF(AV) ≤ 10 A
• Reverse voltage: VR ≤ 45 V
• Low forward voltage
• High power capability due to clip-bonding technology and heat sink
• Small and thin SMD power plastic package, typical height 0.78 mm
3. Applications
• Low voltage rectification
• High efficiency DC-to-DC conversion
• Switch mode power supply
• Freewheeling application
• Reverse polarity protection
• Low power consumption application
4. Quick reference data
Table 1.
Symbol
IF(AV)
VR
VF
Quick reference data
Parameter
average forward
current
reverse voltage
forward voltage
IR reverse current
Conditions
δ = 0.5; f = 20 kHz; Tsp ≤ 130 °C;
square wave
Tj = 25 °C
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
VR = 10 V; tp ≤ 3 ms; δ = 0.3;
Tj = 25 °C; pulsed
VR = 45 V; tp ≤ 3 ms; δ = 0.3;
Tj = 25 °C; pulsed
Min Typ Max Unit
- - 10 A
- - 45 V
- 473 540 mV
- 13 30 µA
- 150 500 µA
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1 page  
NXP Semiconductors
PMEG45A10EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
VF
IR
Cd
trr
trr
V(BR)R
VFRM
Characteristics
Parameter
Conditions
forward voltage
IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 2 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 3 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 5 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
IF = 10 A; tp ≤ 300 µs; δ ≤ 0.02;
Tj = 25 °C; pulsed
reverse current
VR = 5 V; tp ≤ 3 ms; δ = 0.3; Tj = 25 °C;
pulsed
VR = 10 V; tp ≤ 3 ms; δ = 0.3;
Tj = 25 °C; pulsed
VR = 30 V; tp ≤ 3 ms; δ = 0.3;
Tj = 25 °C; pulsed
VR = 45 V; tp ≤ 3 ms; δ = 0.3;
Tj = 25 °C; pulsed
VR = 10 V; tp ≤ 3 ms; δ = 0.3;
Tj = 125 °C; pulsed
diode capacitance
VR = 1 V; f = 1 MHz; Tj = 25 °C
VR = 10 V; f = 1 MHz; Tj = 25 °C
reverse recovery time ; IF = 0.5 A; IR = 0.5 A; IR(meas) = 0.1 A;
step recovery
Tj = 25 °C
reverse recovery time ; dIF/dt = 200 A/µs; Tj = 25 °C; IF = 6 A;
ramp recovery
VR = 26 V
reverse breakdown
voltage
IR = 5 mA; Tj = 25 °C; tp ≤ 1.2 ms; δ =
0.12; pulsed
peak forward recovery IF = 0.5 A; dIF/dt = 20 A/µs; Tj = 25 °C
voltage
Min Typ Max Unit
- 330 380 mV
- 357 - mV
- 377 - mV
- 409 470 mV
- 473 540 mV
- 10 - µA
- 13 30 µA
- 36 - µA
- 150 500 µA
- 11 - mA
- 715 - pF
- 240 - pF
- 21 - ns
- 13 - ns
45 - - V
- 317 - mV
PMEG45A10EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
5 / 14
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5 Page 
NXP Semiconductors
PMEG45A10EPD
45 V, 10 A low VF MEGA Schottky barrier rectifier
14. Revision history
Table 8. Revision history
Data sheet ID
Release date
Data sheet status
PMEG45A10EPD v.2 20140416
Product data sheet
Modifications:
• Product status changed
PMEG45A10EPD v.1 20140217
Objective data sheet
Change notice
-
-
Supersedes
PMEG45A10EPD v.1
-
PMEG45A10EPD
Product data sheet
All information provided in this document is subject to legal disclaimers.
16 April 2014
© NXP Semiconductors N.V. 2014. All rights reserved
11 / 14
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