MMFT3055V Datasheet PDF - ON Semiconductor
| Part Number | MMFT3055V | |
| Description | Power MOSFET ( Transistor ) | |
| Manufacturers | ON Semiconductor | |
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MMFT3055V
Power MOSFET
1 Amp, 60 Volts
N−Channel SOT−223
These Power MOSFETs are designed for low voltage, high speed
switching applications in power supplies, converters and power motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients.
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Pb−Free Package is Available
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 10 ms)
Drain Current − Continuous
Drain Current − Continuous @ 100°C
Drain Current − Single Pulse (tp ≤ 10 ms)
Total PD @ TA = 25°C mounted on 1″ sq.
Drain pad on FR−4 bd material
Total PD @ TA = 25°C mounted on
0.70″ sq. Drain pad on FR−4 bd material
Total PD @ TA = 25°C mounted on min.
Drain pad on FR−4 bd material
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
60 Vdc
60 Vdc
± 20 Vdc
± 25 Vpk
1.7 Adc
1.4
6.0 Apk
2.1 W
1.7
0.94
6.3 mW/°C
Operating and Storage Temperature Range
TJ, Tstg
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, Peak
IL = 3.4 Apk, L = 10 mH, RG = 25 W )
Thermal Resistance
− Junction to Ambient on 1″ sq.
Drain padon FR−4 bd material
− Junction to Ambient on 0.70″ sq.
Drain pad on FR−4 bd material
− Junction to Ambient on min.
Drain pad on FR−4 bd material
EAS
RqJA
RqJA
RqJA
mJ
58
°C/W
70
88
159
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 s
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 4
1
http://onsemi.com
1 AMPERE, 60 VOLTS
RDS(on) = 130 mW
N−Channel
D
G
S
12
3
4
TO−261AA
CASE 318E
STYLE 3
MARKING DIAGRAM AND
PIN ASSIGNMENT
4 Drain
1
Gate
AYW
V3055 G
G
2
Drain
3
Source
A = Assembly Location
Y = Year
W = Work Week
G = Pb−Free Package
V3055 = Device Code
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MMFT3055VT1
SOT−223 1000 Tape & Reel
MMFT3055VT1G SOT−223 1000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MMFT3055V/D
Free Datasheet http://www.Datasheet4U.com
|
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MMFT3055V
10 30
9 QT
8
27
24
7
6 Q1
5
Q2
VGS 21
18
15
4 12
39
2
ID = 1.7 A
TJ = 25°C
6
1 Q3
VDS 3
00 2
4
6
0
8 10 12 14
QT, TOTAL CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
1000
VDD = 30 V
ID = 1.7 A
VGS = 10 V
TJ = 25°C
100
td(off)
tf
10 tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
2
1.8
VGS = 0 V
TJ = 25°C
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0.5 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define the
maximum simultaneous drain−to−source voltage and drain
current that a transistor can handle safely when it is forward
biased. Curves are based upon maximum peak junction
temperature and a case temperature (TC) of 25°C. Peak
repetitive pulsed power limits are determined by using the
thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance−General
Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RqJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 13). Maximum
energy at currents below rated continuous ID can safely be
assumed to equal the values indicated.
http://onsemi.com
5
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| Information | Total 7 Pages | |
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