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PDF IRF7317PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF7317PBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 95296
IRF7317PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
G1 2
S2 3
7 D1
VDSS 20V -20V
6 D2
l Lead-Free
Description
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.029Ω 0.058Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
N-Channel P-Channel
Drain-Source Voltage
VDS
20
-20
Gate-Source Voltage
VGS
± 12
Continuous Drain Current
TA = 25°C
TA = 70°C
6.6 -5.3
5.3 -4.3
Pulsed Drain Current
IDM 26
-21
Continuous Source Current (Diode Conduction)
IS 2.5
-2.5
Maximum Power Dissipation
TA = 25°C
TA = 70°C
2.0
1.3
Single Pulse Avalanche Energy
EAS 100
150
Avalanche Current
IAR 4.1
-2.9
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
EAR
dv/dt
0.20
5.0 -5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
Symbol
RθJA
Limit
62.5
Units
A
W
mJ
A
mJ
V/ ns
Units
°C/W
5/25/04
Free Datasheet http://www.Datasheet4U.com
1 page  
N-Channel
IRF7317PbF
1600
1200
800
Ciss
V GS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
400
0A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
10 ID = 6.0A
8
VDS = 10V
6
4
2
0
0 5 10 15 20 25 30
QG , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
0.50
0.20
10
0.10
0.05
0.02
1 0.01
0.1
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
PDM
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ= P DM x ZthJA + TA
0.01 0.1
1
t1, Rectangular Pulse Duration (sec)
10
100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Free Datasheet http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF7317PBF.PDF ] | |
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