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PDF P20N06 Data sheet ( Hoja de datos )
| Número de pieza | P20N06 | |
| Descripción | FQP20N06 | |
| Fabricantes | Freescale | |
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Freescale
N-Channel 60-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TO-220 saves board space
• Fast switching speed
• High performance trench technology
FQ P20N06/ MCP20N06
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
60 26.5 @VGS= 10V
32.5 @VGS= 4.5V
ID (A)
87a
D1
G1
S1
N-Channel MOSFET
ABSOLUTEMAXIMUMRATINGS (TA = 25 oCUNLESS OTHERWISENOTED)
Parameter
Symbol Limit Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TC=25oC ID
IDM
60 V
±20
87 A
240
Continuous Source Current (Diode Conduction)a
IS 90 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TC=25oC PD
300 W
TJ, Tstg -55 to 175 oC
THERMALRESISTANCERATINGS
Parameter
Symbol
MaximumJunction-to-Ambienta
RθJA
MaximumJunction-to-Case
RθJC
Notes
a. Package Limited
b. Pulse width limited by maximum junction temperature
Maximum Units
62.5 oC/W
0.5 oC/W
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1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet P20N06.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| P20N06 | CEP20N06 |  CET |
| P20N06 | FQP20N06 | Freescale |
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