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What is SUD50P10-43?

This electronic component, produced by the manufacturer "Vishay", performs the same function as "P-Channel MOSFET".


SUD50P10-43 Datasheet PDF - Vishay

Part Number SUD50P10-43
Description P-Channel MOSFET
Manufacturers Vishay 
Logo Vishay Logo 


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New Product
SUD50P10-43
Vishay Siliconix
P-Channel 100-V (D-S) 175 _C MOSFET
PRODUCT SUMMARY
VDS (V)
–100
rDS(on) (W)
0.043 at VGS = –10 V
ID (A)a
–38
Qg (Typ)
105 nC
FEATURES
D TrenchFETr Power MOSFET
RoHS
COMPLIANT
TO-252
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free)
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175 _C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current
Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
TC = 25 _C
TA = 25 _C
L = 0.1 mH
TC = 25 _C
TC = 70 _C
TA = 25 _C
TA = 70 _C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
–100
"20
–38a
–31.8a
–9.4b, c
–7.8b, c
–50
–50a
–6.9b, c
–40
80
136
95
8.3b, c
5.8b, c
–50 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case (Drain)
Notes:
a. Package limited.
b. Surface mounted on 1” x 1” FR4 Board.
c. t = 10 sec.
d. Maximum under steady state conditions is 40 _C/W.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
t p 10 sec
Steady State
Symbol
RthJA
RthJC
Typical
15
0.85
Maximum
18
1.1
Unit
V
A
mJ
W
_C
Unit
_C/W
www.vishay.com
1
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SUD50P10-43 equivalent
New Product
SUD50P10-43
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED)
Current De-Rating*
50
140
120
40
100
30 80
20 60
40
10
20
0
0 25 50 75 100 125 150 175
TC – Case Temperature (_C)
0
25
Power De-Rating
50 75 100 125 150
TC – Case Temperature (_C)
175
Single Pulse Avalanche Capability
100
10
TA
+
L@
BV *
IA
VDD
1
0.000001
0.00001
0.0001
0.001
TA – Time In Avalanche (sec)
0.01
*The power dissipation PD is based on TJ(max) = 175 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for
cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
Document Number: 73445
S–60311—Rev. B, 27-Feb-06
www.vishay.com
5
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