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PDF K3444 Data sheet ( Hoja de datos )
| Número de pieza | K3444 | |
| Descripción | MOSFET ( Transistor ) - 2SK3444 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3444 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK3444
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3444
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Unit: mm
• Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 10 S (typ.)
• Low leakage current: IDSS = 100 µA (VDS = 200 V)
• Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
200
200
±30
25
100
125
488
25
12.5
150
−55 to 150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Symbol
Rth (ch-c)
Max
1.00
Unit
°C/W
Notice:
Please use the S1 pin for gate input
signal return. Make sure that the
main current flows into the S2 pin.
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 1.26 mH, IAR = 25 A, RG = 25 Ω
4
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
Marking
2
3
K3444
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2004-07-06
http://www.Datasheet4U.com
1 page  
2SK3444
rth – tw
10
1
Duty = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
Single pulse
0.01
10 µ
100 µ
PDM
t
T
Duty = t/T
Rth (ch-c) = 1.0°C/W
1m
10 m
100 m
1
Pulse width tw (S)
10
Safe operating area
1000
ID max (pulsed) *
100
ID max (continuous)
100 µs*
1 ms*
10
DC operation
Tc = 25°C
1
* Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly
with increase in temperature.
0.1
1 10
100
VDSS max
1000
Drain-source voltage VDS (V)
EAS – Tch
500
400
300
200
100
0
25 50
75 100 125 150
Channel temperature (initial) Tch (°C)
15 V
−15 V
BVDSS
IAR
VDD
VDS
Test circuit
RG = 25 Ω
VDD = 50 V, L = 1.26 mH
Waveform
ΕAS
=
1
2
⋅L ⋅I2
⋅ ⎜⎜⎝⎛
BVDSS
BVDSS − VDD
⎟⎟⎠⎞
5 2004-07-06
http://www.Datasheet4U.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K3444.PDF ] | |
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